Nanogranular Al2O3 proton conducting films for low-voltage oxide-based homojunction thin-film transistors

2013 ◽  
Vol 1 (15) ◽  
pp. 2781 ◽  
Author(s):  
Hongliang Zhang ◽  
Liqiang Guo ◽  
Qing Wan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Proton Conducting

Paste-type thin-film transistors based on self-supported chitosan membranes

RSC Advances ◽  
2015 ◽  
Vol 5 (127) ◽  
pp. 105084-105089 ◽  
Author(s):  
Guodong Wu ◽  
Hui Xiao
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Flexible Substrates ◽  
Logic Function ◽  
Proton Conducting ◽  
Low Voltage Operation ◽  
Chitosan Membranes ◽  
Conducting Membranes

Self-supported chitosan-based proton-conducting membranes were used as both flexible substrates and gate dielectrics for paste-type TFTs with low-voltage operation and logic function.

Low-Voltage InGaZnO Thin-Film Transistors Gated by SiO2 Proton Conducting Films

2014 ◽  
Vol 1033-1034 ◽  
pp. 1176-1181
Author(s):  
Rui Chao Liu ◽  
Hong Liang Zhang ◽  
Run Yuan Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Low Voltage ◽  
Logic Circuit ◽  
Proton Conducting ◽  
Large Current ◽  
Effect Transistor ◽  
Self Assembled

Low-voltage (1.5 V) InGaZnO (IGZO) thin-film transistors (TFTs) gated by the SiO2 proton conducting films were self-assembled by a gradient shadow mask in sputtered self-assembled IGZO channel process. The IGZO TFTs have a high-performance with a large current on/off ratio of ≥1.2×106, a low subthreshold swing of ≤120 mV/decade and a high field-effect mobility of 2.2 ~ 6.9 cm2/V·s. Threshold voltage is tuned by various thicknesses of IGZO channel. Both depletion mode and enhancement mode on the same chip is obtained, which will implement a direct-coupled field-effect transistor logic circuit. Our results demonstrate that the IGZO TFTs are promising logic circuit candidates for portable low-voltage oxide-based devices.

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

2013 ◽  
Vol 102 (5) ◽  
pp. 052905 ◽  
Author(s):  
Hongliang Zhang ◽  
Qing Wan ◽  
Changjin Wan ◽  
Guodong Wu ◽  
Liqiang Zhu
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Proton Conducting ◽  
Transparent Oxide

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric

2015 ◽  
Vol 36 (6) ◽  
pp. 573-575 ◽  
Author(s):  
Yang Shao ◽  
Xiang Xiao ◽  
Xin He ◽  
Wei Deng ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage
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