Observation of Coulomb blockade and Coulomb staircase in a lateral metal nanostructure

2013 ◽  
Author(s):  
Sourabh Barua ◽  
Rohan Poojary ◽  
K. P. Rajeev
Keyword(s):  
Coulomb Blockade ◽  
Metal Nanostructure ◽  
Coulomb Staircase

ROOM TEMPERATURE TUNNELING CHARACTERISTICS OF ULTRA-SMALL NORMAL JUNCTIONS

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI
Keyword(s):  
Scanning Tunneling Microscope ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Single Electron Tunneling ◽  
Coulomb Staircase

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.

Coulomb blockade and Coulomb staircase behavior observed at room temperature

2017 ◽  
Vol 4 (2) ◽  
pp. 024004 ◽  
Author(s):  
Pipit Uky Vivitasari ◽  
Yasuo Azuma ◽  
Masanori Sakamoto ◽  
Toshiharu Teranishi ◽  
Yutaka Majima
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Coulomb Staircase

Theoretical Study on Tunnel Magnetoresistance Oscillation Due to Coulomb Blockade in Nanoscale Magnetic Tunnel Junction

2003 ◽  
Vol 776 ◽  
Author(s):  
Yasushi Takemura ◽  
Jun-ichi Shirakashi
Keyword(s):  
Tunnel Junction ◽  
Coulomb Blockade ◽  
Theoretical Study ◽  
Voltage Dependence ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
The Monte Carlo Method ◽  
Current Voltage ◽  
Coulomb Staircase ◽  
Charging Energy

AbstractIn a small magnetic tunnel junction (MTJ) whose charging energy is larger than a thermal energy, the tunnel magnetoresistance (TMR) is enhanced by the Coulomb blockade. Transport properties in a double MTJ were theoretically studied by using the Monte Carlo method. The temperature dependence of current-voltage and TMR characteristics indicated that a small junction with 5 nm electrodes exhibited the Coulomb blockade at 300 K. It was also found that the background charge changed the threshold voltage of the Coulomb blockade. In asymmetric double tunnel junctions, the current-voltage characteristic exhibited a Coulomb staircase and the voltage dependence of the TMR ratio oscillated.

SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes

2006 ◽  
Vol 958 ◽  
Author(s):  
Conrad R. Wolf ◽  
Andreas Ladenburger ◽  
Rainer Enchelmaier ◽  
Klaus Thonke ◽  
Rolf Sauer
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Silicon On Insulator ◽  
Self Organization ◽  
Native Oxide ◽  
Differential Conductance ◽  
Silicon Quantum Dots ◽  
Novel Approach ◽  
Coulomb Staircase ◽  
Single Electron Devices

ABSTRACTIn this paper we present a novel approach to fabricate single-electron devices utilizing different self-organization and self-alignment effects. Silicon quantum dots (QDs) are obtained employing reactive ion etching (RIE) into a silicon-on-insulator (SOI) substrate with a self-assembled etch mask. Electrodes with nanometer separation are fabricated and aligned to the QDs by means of a controlled electromigration process. The tunneling rates of the devices are defined by the native oxide covering the silicon QDs and can be adjusted by self-limiting thermal oxidation. The devices show clear Coulomb blockade behavior as well as Coulomb staircase features. In some samples also a gate influence is present giving rise to Coulomb diamonds in the differential conductance diagram.

Room temperature Coulomb blockade and Coulomb staircase from self‐assembled nanostructures

1996 ◽  
Vol 14 (3) ◽  
pp. 1178-1183 ◽  
Author(s):  
R. P. Andres ◽  
S. Datta ◽  
M. Dorogi ◽  
J. Gomez ◽  
J. I. Henderson ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Coulomb Staircase ◽  
Self Assembled

Electrical Properties of Nanoscale Tisi2 Islands on Si

1999 ◽  
Vol 583 ◽  
Author(s):  
Jaehwan Oh ◽  
Hoon Ham ◽  
Peter Laloli ◽  
R. J. Nemanich
Keyword(s):  
Electrical Properties ◽  
High Temperatures ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Electrical Characteristics ◽  
Single Electron Tunneling ◽  
Coulomb Staircase ◽  
Beam Deposition

AbstractNanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

One-electron transistors based on Coulomb blockade and quantum interference

1999 ◽  
Vol 169 (4) ◽  
pp. 471 ◽  
Author(s):  
Z.D. Kvon ◽  
L.V. Litvin ◽  
V.A. Tkachenko ◽  
A.L. Aseev
Keyword(s):  
Coulomb Blockade ◽  
Quantum Interference ◽  
Electron Transistors
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