Coulomb blockade gap and coulomb staircase of a new type in various tunnel-junction arrays with two branches

1999 ◽  
Vol 25 (1-2) ◽  
pp. 279-284 ◽  
Author(s):  
M. Shin ◽  
S. Lee ◽  
K.W. Park ◽  
E.-H. Lee
Keyword(s):  
Tunnel Junction ◽  
Coulomb Blockade ◽  
New Type ◽  
Coulomb Staircase ◽  
Junction Arrays

Theoretical Study on Tunnel Magnetoresistance Oscillation Due to Coulomb Blockade in Nanoscale Magnetic Tunnel Junction

2003 ◽  
Vol 776 ◽  
Author(s):  
Yasushi Takemura ◽  
Jun-ichi Shirakashi
Keyword(s):  
Tunnel Junction ◽  
Coulomb Blockade ◽  
Theoretical Study ◽  
Voltage Dependence ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
The Monte Carlo Method ◽  
Current Voltage ◽  
Coulomb Staircase ◽  
Charging Energy

AbstractIn a small magnetic tunnel junction (MTJ) whose charging energy is larger than a thermal energy, the tunnel magnetoresistance (TMR) is enhanced by the Coulomb blockade. Transport properties in a double MTJ were theoretically studied by using the Monte Carlo method. The temperature dependence of current-voltage and TMR characteristics indicated that a small junction with 5 nm electrodes exhibited the Coulomb blockade at 300 K. It was also found that the background charge changed the threshold voltage of the Coulomb blockade. In asymmetric double tunnel junctions, the current-voltage characteristic exhibited a Coulomb staircase and the voltage dependence of the TMR ratio oscillated.

OHMIC PROPERTY OF A SINGLE-ELECTRON TUNNEL-JUNCTION SYSTEM AND ITS APPLICATION TO NEURAL NETWORK SYNAPSES

2004 ◽  
Vol 18 (10n11) ◽  
pp. 1457-1464
Author(s):  
MINCHEOL SHIN
Keyword(s):  
Neural Network ◽  
Tunnel Junction ◽  
Coulomb Blockade ◽  
Tunneling Current ◽  
Hopfield Neural Network ◽  
Single Electron ◽  
Switching Function ◽  
Variable Resistor ◽  
Current Flows ◽  
Junction Arrays

We have studied the ohmic property of parallel coupled single-electron tunnel-junction arrays. When a current flows in one array ('driving' array), the Coulomb blockade state of the other array ('passive' array) is lifted, leading to an ohmic relationship between the tunneling current and the bias voltage. The driving current basically plays the role of a switch for the current in the passive array, as it can vary the ohmic conductance as well. Since the ohmic characteristic and the switching function are quite robust to the background or stray charges, the parallel coupled tunnel-junction system can be used as a variable resistor in logic circuits. As its specific application, we have proposed a Hopfield neural network with single-electron synapses.

scholarly journals Magnetoresistance of the double-tunnel-junction Coulomb blockade with magnetic metals

1998 ◽  
Vol 57 (18) ◽  
pp. 11521-11526 ◽  
Author(s):  
Kingshuk Majumdar ◽  
Selman Hershfield
Keyword(s):  
Tunnel Junction ◽  
Coulomb Blockade
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