Room temperature Coulomb blockade and Coulomb staircase from self‐assembled nanostructures

1996 ◽  
Vol 14 (3) ◽  
pp. 1178-1183 ◽  
Author(s):  
R. P. Andres ◽  
S. Datta ◽  
M. Dorogi ◽  
J. Gomez ◽  
J. I. Henderson ◽  
...  
2017 ◽  
Vol 381 (5) ◽  
pp. 476-480 ◽  
Author(s):  
Fei Wang ◽  
Jingyue Fang ◽  
Shengli Chang ◽  
Shiqiao Qin ◽  
Xueao Zhang ◽  
...  

2022 ◽  
Vol 120 (1) ◽  
pp. 012105
Author(s):  
C. A. Sgroi ◽  
J. Brault ◽  
J.-Y. Duboz ◽  
S. Chenot ◽  
P. Vennéguès ◽  
...  

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.


2017 ◽  
Vol 4 (2) ◽  
pp. 024004 ◽  
Author(s):  
Pipit Uky Vivitasari ◽  
Yasuo Azuma ◽  
Masanori Sakamoto ◽  
Toshiharu Teranishi ◽  
Yutaka Majima

Science ◽  
1996 ◽  
Vol 272 (5266) ◽  
pp. 1323-1325 ◽  
Author(s):  
R. P. Andres ◽  
T. Bein ◽  
M. Dorogi ◽  
S. Feng ◽  
J. I. Henderson ◽  
...  

1999 ◽  
Vol 583 ◽  
Author(s):  
Jaehwan Oh ◽  
Hoon Ham ◽  
Peter Laloli ◽  
R. J. Nemanich

AbstractNanoscale TiSi2 islands are formed by electon beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800–1000°C). The typical island sizes were ˜10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.


1995 ◽  
Vol 52 (12) ◽  
pp. 9071-9077 ◽  
Author(s):  
M. Dorogi ◽  
J. Gomez ◽  
R. Osifchin ◽  
R. P. Andres ◽  
R. Reifenberger

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