scholarly journals Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

2013 ◽  
Vol 113 (3) ◽  
pp. 033505 ◽  
Author(s):  
B. L. Darby ◽  
B. R. Yates ◽  
I. Martin-Bragado ◽  
J. L. Gomez-Selles ◽  
R. G. Elliman ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Substrate Orientation

A Study of Substrate Orientation Dependence of the Solid-Phase Epitaxial Growth of Amorphised GaAs

1998 ◽  
Vol 523 ◽  
Author(s):  
K. B. Belay ◽  
D. J. Llewellyn ◽  
M. C. Ridgway
Keyword(s):  
Epitaxial Growth ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Liquid Nitrogen Temperature ◽  
Amorphous Layer ◽  
Orientation Dependence ◽  
Ex Situ ◽  
Cross Sectional ◽  
Substrate Orientation

AbstractIn-situ transmission electron microscopy (TEM) has been utilized in conjunction with conventional ex-situ Rutherford backscattering spectrometry and channeling (RBS/C), in-situ time resolved reflectivity (TRR) and ex-situ TEM to study the influence of substrate orientation on the solid-phase epitaxial growth (SPEG) of amorphised GaAs. A thin amorphous layer was produced on semi-insulating (100), (110) and (111) GaAs substrates by ion implantation of 190 and 200 keV Ga and As ions, respectively, to a total dose of 1e14/cm2. During implantation, substrates were maintained at liquid nitrogen temperature. In-situ annealing at ∼260°C was performed in the electron microscope and the data obtained was quantitatively analysed. It has been demonstrated that the non-planarity of the crystalline-amorphous (c/a)-interface was greatest for the (111) substrate orientation and least for the (110) substrate orientation. The roughness was measured in terms of the length of the a/c-interface in given window as a function of depth on a frame captured from the recorded video of the in-situ TEM experiments. The roughness of the c/a-interface was determined by the size of the angle subtended by the microtwins with respect to the interface on ex-situ TEM cross-sectional micrographs. The angle was both calculated and measured and was the largest in the case of (111) plane. The twinned fraction as a function of orientation, was calculated in terms of the disorder measured from the RBS/C and it was greatest for the (111) orientation.

Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films

1986 ◽  
Vol 25 (Part 1, No. 5) ◽  
pp. 667-672 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Amorphous Si ◽  
Si Films

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

Stressed solid-phase epitaxial growth of (011) Si

2009 ◽  
Vol 24 (2) ◽  
pp. 305-309 ◽  
Author(s):  
N.G. Rudawski ◽  
K.S. Jones ◽  
R. Gwilliam
Keyword(s):  
Epitaxial Growth ◽  
Growth Kinetics ◽  
Growth Velocity ◽  
Activation Volume ◽  
Solid Phase ◽  
Uniaxial Stress ◽  
Atomistic Model ◽  
Substrate Orientation ◽  
Free Case ◽  
Kinetics Of

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane uniaxial stress to magnitude of 0.9 ± 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase epitaxial growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent.

The influence of the structure of amorphous silicon deposited in ultrahigh vacuum on the solid phase epitaxial growth rate

1984 ◽  
Vol 117 (2) ◽  
pp. 101-106 ◽  
Author(s):  
I.G. Kaverina ◽  
V.V. Korobtsov ◽  
V.G. Lifshits ◽  
V.G. Zavodinskii ◽  
A.V. Zotov
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ultrahigh Vacuum

Enhancement of Lateral Solid Phase Epitaxial Growth of Si on SiO2 with 31P Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
C. S. Pai ◽  
J. C. Bean ◽  
M. Cerullo ◽  
K. T. Short ◽  
A. E. White
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Dopant Concentration ◽  
Solid Phase ◽  
Surface Region ◽  
Undoped Sample ◽  
Maximum Length ◽  
Device Application ◽  
Amorphous Si

AbstractThe lateral solid phase epitaxial growth of amorphous Si on SiO2 patterns with 31P implantation is studied. By implanting 31P into only the surface region of the sample to form a doped channel, the Si growth rate is enhanced and the random crystallization of Si is suppressed. The maximum length of lateral solid phase epitaxial Si obtained from samples with the doped channel (∼9μπι) is a factor of 3 more than that of the undoped sample. This Si on SiO2 film has a low dopant concentration after the highly doped channel is removed and should be useful for device application.

scholarly journals Effect of Nonhydrostatic Stress on Crystal Growth Kinetics

1990 ◽  
Vol 202 ◽  
Author(s):  
Michael J. Aziz ◽  
Paul C. Sabin ◽  
Guo-Quan Lu
Keyword(s):  
Growth Rate ◽  
Transition State ◽  
Epitaxial Growth ◽  
Activation Volume ◽  
Solid Phase ◽  
Strain Tensor ◽  
Solid Phase Epitaxy ◽  
Crystal Growth Kinetics ◽  
Measured Activation ◽  
Amorphous Surface

ABSTRACTThe effect of nonhydrostatic stresses on the solid phase epitaxial growth rate of crystalline Si(100) into self-implanted amorphous surface layers has been measured. Uniaxial stresses of up to 6 kbar (0.6 GPa) were attained by bending wafers over SiO2 rods and annealing at a temperature too low for plastic deformation to relieve the stress in the crystal, but high enough for solid phase epitaxial growth to proceed. The growth rate on the tensile side was greater than that on the compressive side of the wafer, in marked contrast to the enhancement observed from hydrostatic pressure. The phenomenology of an “activation strain”, the nonhydrostatic analogue of the activation volume, has been developed to characterize the results. Combined with the measurement of the activation volume, the measurement reported here permits us to characterize to first order the entire activation strain tensor corresponding to the transition state for solid phase epitaxy of Si(lOO). We conclude that the transition state for this process is “short and fat”; that is, the fluctuation to the transition state involves an expansion in the two in-plane directions and a contraction in the direction normal to the surface large enough to make the overall volume change negative. The symmetry of the measured activation strain tensor is inconsistent with all bulk point defect mechanisms for solid phase epitaxy. The relevance of the activation strain formalism to heteroepitaxy and vapor phase epitaxy is discussed.

Sign in / Sign up

Export Citation Format

Share Document