Concentration dependence of the solid-phase epitaxial growth rate in Te implanted Si

1981 ◽  
Vol 25 (2) ◽  
pp. 153-155 ◽  
Author(s):  
S. U. Campisano ◽  
A. E. Barbarino
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Concentration Dependence ◽  
Solid Phase

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

The influence of the structure of amorphous silicon deposited in ultrahigh vacuum on the solid phase epitaxial growth rate

1984 ◽  
Vol 117 (2) ◽  
pp. 101-106 ◽  
Author(s):  
I.G. Kaverina ◽  
V.V. Korobtsov ◽  
V.G. Lifshits ◽  
V.G. Zavodinskii ◽  
A.V. Zotov
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Ultrahigh Vacuum

Enhancement of Lateral Solid Phase Epitaxial Growth of Si on SiO2 with 31P Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
C. S. Pai ◽  
J. C. Bean ◽  
M. Cerullo ◽  
K. T. Short ◽  
A. E. White
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Dopant Concentration ◽  
Solid Phase ◽  
Surface Region ◽  
Undoped Sample ◽  
Maximum Length ◽  
Device Application ◽  
Amorphous Si

AbstractThe lateral solid phase epitaxial growth of amorphous Si on SiO2 patterns with 31P implantation is studied. By implanting 31P into only the surface region of the sample to form a doped channel, the Si growth rate is enhanced and the random crystallization of Si is suppressed. The maximum length of lateral solid phase epitaxial Si obtained from samples with the doped channel (∼9μπι) is a factor of 3 more than that of the undoped sample. This Si on SiO2 film has a low dopant concentration after the highly doped channel is removed and should be useful for device application.

scholarly journals Effect of Nonhydrostatic Stress on Crystal Growth Kinetics

1990 ◽  
Vol 202 ◽  
Author(s):  
Michael J. Aziz ◽  
Paul C. Sabin ◽  
Guo-Quan Lu
Keyword(s):  
Growth Rate ◽  
Transition State ◽  
Epitaxial Growth ◽  
Activation Volume ◽  
Solid Phase ◽  
Strain Tensor ◽  
Solid Phase Epitaxy ◽  
Crystal Growth Kinetics ◽  
Measured Activation ◽  
Amorphous Surface

ABSTRACTThe effect of nonhydrostatic stresses on the solid phase epitaxial growth rate of crystalline Si(100) into self-implanted amorphous surface layers has been measured. Uniaxial stresses of up to 6 kbar (0.6 GPa) were attained by bending wafers over SiO2 rods and annealing at a temperature too low for plastic deformation to relieve the stress in the crystal, but high enough for solid phase epitaxial growth to proceed. The growth rate on the tensile side was greater than that on the compressive side of the wafer, in marked contrast to the enhancement observed from hydrostatic pressure. The phenomenology of an “activation strain”, the nonhydrostatic analogue of the activation volume, has been developed to characterize the results. Combined with the measurement of the activation volume, the measurement reported here permits us to characterize to first order the entire activation strain tensor corresponding to the transition state for solid phase epitaxy of Si(lOO). We conclude that the transition state for this process is “short and fat”; that is, the fluctuation to the transition state involves an expansion in the two in-plane directions and a contraction in the direction normal to the surface large enough to make the overall volume change negative. The symmetry of the measured activation strain tensor is inconsistent with all bulk point defect mechanisms for solid phase epitaxy. The relevance of the activation strain formalism to heteroepitaxy and vapor phase epitaxy is discussed.

scholarly journals Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

2013 ◽  
Vol 113 (3) ◽  
pp. 033505 ◽  
Author(s):  
B. L. Darby ◽  
B. R. Yates ◽  
I. Martin-Bragado ◽  
J. L. Gomez-Selles ◽  
R. G. Elliman ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Substrate Orientation

Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon

1994 ◽  
Vol 356 ◽  
Author(s):  
William B. Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Cross Section ◽  
Solid Phase ◽  
Quantitative Agreement ◽  
Ex Situ ◽  
Time Resolved ◽  
Stress Effects ◽  
Crystal Interface

AbstractThe dependence of solid phase epitaxial growth in Si on uniaxial compression applied perpendicular to the amorphous-crystal interface is investigated. Long, thin pure Si bars of square cross section are ion-implanted to produce amorphous layers on the end faces. The bars are placed end-to-end and uniaxially loaded at temperature to partially regrow the amorphous layers. The resulting growth rates are measured ex situ by re-heating the samples on a hot stage and using time-resolved reflectivity to deduce interface depths. Preliminary results are that uniaxial compression is more effective than hydrostatic pressure for enhancing the growth rate, in qualitative but not quantitative agreement with previously made predictions.

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

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