Enhancement of Lateral Solid Phase Epitaxial Growth of Si on SiO2 with 31P Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
C. S. Pai ◽  
J. C. Bean ◽  
M. Cerullo ◽  
K. T. Short ◽  
A. E. White
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Dopant Concentration ◽  
Solid Phase ◽  
Surface Region ◽  
Undoped Sample ◽  
Maximum Length ◽  
Device Application ◽  
Amorphous Si

AbstractThe lateral solid phase epitaxial growth of amorphous Si on SiO2 patterns with 31P implantation is studied. By implanting 31P into only the surface region of the sample to form a doped channel, the Si growth rate is enhanced and the random crystallization of Si is suppressed. The maximum length of lateral solid phase epitaxial Si obtained from samples with the doped channel (∼9μπι) is a factor of 3 more than that of the undoped sample. This Si on SiO2 film has a low dopant concentration after the highly doped channel is removed and should be useful for device application.

Epitaxial Growth of SixGe1−x Films on Si by Solid Phase Epitaxy.

1984 ◽  
Vol 37 ◽  
Author(s):  
C. S. Pai ◽  
S. S. Lau
Keyword(s):  
Phase Separation ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Metal Layer ◽  
Alloyed Layer ◽  
Quaternary Compounds ◽  
Amorphous Si ◽  
Ion Backscattering

AbstractIt has been demonstrated in the literature that amorphous Si (or Ge) can be transported across a metal layer and grown epitaxially on Si(Ge) single crystal substrates in the solid phase. The objective of this study is to investigate if amorphous SixGe1−x mixtures can be transported uniformly across a medium and grown epitaxially on single crystal substrates without phase separation. The samples were prepared by e-beam evaporation of thin Pd films onto Si<100> substrates, followed by co-evaporation of SixGe1−x alloyed films (0<x<1) without breaking vacuum. The samples were anneaie in vacuum at 300°C to form a Pd silicide-germanide layer at the interface, then at 500°C for transport of the alloyed layer across the Pd silicide-germanide layer and subsequent epitaxial growth on Si substrate. The samples were investigated by x-ray diffraction and by MeV ion backscattering and channeling. The results show the alloyed film transports uniformly with no phase separation detected. The channeling result shows the grown alloyed layer is epitaxial with some Pd trapped in the layer. This simple technique is potentially useful for forming lattice-matched non-alloyed ohmic contacts on III–V ternary and quaternary compounds.

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

1985 ◽  
Vol 46 (3) ◽  
pp. 268-270 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films

Structural modification of a 7 × 7 superstructure buried at the amorphous Si/Si(111) interface during solid phase epitaxial growth

1991 ◽  
Vol 249 (1-3) ◽  
pp. L300-L306
Author(s):  
Akira Sakai ◽  
Toru Tatsumi ◽  
Ichiro Hirosawa ◽  
Haruhiko Ono ◽  
Koichi Ishida
Keyword(s):  
Epitaxial Growth ◽  
Structural Modification ◽  
Solid Phase ◽  
Amorphous Si

Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films

1986 ◽  
Vol 25 (Part 1, No. 5) ◽  
pp. 667-672 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Amorphous Si ◽  
Si Films

scholarly journals Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

1996 ◽  
Vol 441 ◽  
Author(s):  
William Barvosa-Carter ◽  
Michael J. Aziz
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Uniaxial Compression ◽  
Solid Phase ◽  
Hydrostatic Stress ◽  
Uniaxial Stress ◽  
Cross Sectional ◽  
Time Resolved ◽  
Crystal Interface

AbstractWe report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

TEM analysis of voids in UHV-deposited amorphous Si layers used for lateral solid phase epitaxial growth

1992 ◽  
Vol 118 (1-2) ◽  
pp. 125-134 ◽  
Author(s):  
M.J.J. Theunissen ◽  
J.M.L. van Rooij-Mulder ◽  
C.W.T. Bulle-Lieuwma ◽  
D.E.W. Vandenhoudt ◽  
D.J. Gravesteijn ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Tem Analysis ◽  
Amorphous Si
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