High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Yuichiro Suzuki; Shimpei Ogiwara; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

doi:10.1063/1.4766917

High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.4766917 ◽

2012 ◽

Vol 101 (20) ◽

pp. 202105 ◽

Cited By ~ 11

Author(s):

Yuichiro Suzuki ◽

Shimpei Ogiwara ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Liquid Phase Epitaxy ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.4900442 ◽

2014 ◽

Vol 105 (17) ◽

pp. 173502 ◽

Cited By ~ 21

Author(s):

Takuji Hosoi ◽

Yuichiro Suzuki ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Liquid Phase Epitaxy ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Cited By ~ 61

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Barrier Layers

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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2High-kDielectric and Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c055 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C055 ◽

Cited By ~ 3

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Raj Jammy ◽

Raymond Joe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2990645 ◽

2008 ◽

Vol 93 (13) ◽

pp. 132902 ◽

Cited By ~ 9

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Feng Zhu ◽

M. Zhang ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Cited By ~ 21

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

And Control

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Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

Applied Physics Letters ◽

10.1063/1.3604417 ◽

2011 ◽

Vol 99 (2) ◽

pp. 022106 ◽

Cited By ~ 7

Author(s):

Y.-T. Chen ◽

H.-S. Lan ◽

W. Hsu ◽

Y.-C. Fu ◽

J.-Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Response

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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1819976 ◽

2005 ◽

Vol 97 (1) ◽

pp. 011101 ◽

Cited By ~ 713

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald ◽

Mayank T. Bulsara ◽

Matthew T. Currie ◽

Anthony Lochtefeld

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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GaAs Metal–Oxide–Semiconductor Field Effect Transistors Fabricated with Low-Temperature Liquid-Phase-Deposited SiO2

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5561 ◽

2002 ◽

Vol 41 (Part 1, No. 9) ◽

pp. 5561-5562 ◽

Cited By ~ 5

Author(s):

Chien-Jung Huang ◽

Zhen-Song Ya ◽

Jui-Hong Horng ◽

Mau-Phon Houng ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Liquid

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III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

Applied Physics Express ◽

10.1143/apex.5.076501 ◽

2012 ◽

Vol 5 (7) ◽

pp. 076501 ◽

Cited By ~ 22

Author(s):

Masafumi Yokoyama ◽

Sanghyeon Kim ◽

Rui Zhang ◽

Noriyuki Taoka ◽

Yuji Urabe ◽

...

Keyword(s):

Metal Oxide ◽

Wafer Bonding ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source ◽

Channel Integration ◽

Direct Wafer Bonding

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Vertical p-type high-mobility heterojunction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1375004 ◽

2001 ◽

Vol 78 (21) ◽

pp. 3334-3336 ◽

Cited By ~ 3

Author(s):

Xiangdong Chen ◽

Qiqing Ouyang ◽

Sankaran Kartik Jayanarayanan ◽

Freek E. Prins ◽

Sanjay Banerjee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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