On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

M. Montes Bajo; C. Hodges; M. J. Uren; M. Kuball

doi:10.1063/1.4737904

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Applied Physics Letters ◽

10.1063/1.4737904 ◽

2012 ◽

Vol 101 (3) ◽

pp. 033508 ◽

Cited By ~ 47

Author(s):

M. Montes Bajo ◽

C. Hodges ◽

M. J. Uren ◽

M. Kuball

Keyword(s):

Electron Mobility ◽

Surface Defects ◽

High Electron Mobility Transistors ◽

High Electron ◽

Current Leakage ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

State Stress

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Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing

Applied Physics Letters ◽

10.1063/1.1899255 ◽

2005 ◽

Vol 86 (14) ◽

pp. 143505 ◽

Cited By ~ 59

Author(s):

Hyeongnam Kim ◽

Jaesun Lee ◽

Dongmin Liu ◽

Wu Lu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Current Leakage ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

Breakdown Mechanism

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Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3701164 ◽

2012 ◽

Vol 100 (14) ◽

pp. 143507 ◽

Cited By ~ 11

Author(s):

P. Marko ◽

A. Alexewicz ◽

O. Hilt ◽

G. Meneghesso ◽

E. Zanoni ◽

...

Keyword(s):

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Random Telegraph Signal ◽

Signal Noise ◽

Electron Mobility Transistors

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Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.120477 ◽

1997 ◽

Vol 71 (25) ◽

pp. 3673-3675 ◽

Cited By ~ 50

Author(s):

R. Gaska ◽

J. W. Yang ◽

A. Osinsky ◽

A. D. Bykhovski ◽

M. S. Shur

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors

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Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3660396 ◽

2011 ◽

Vol 29 (6) ◽

pp. 060603 ◽

Cited By ~ 12

Author(s):

L. Liu ◽

F. Ren ◽

S. J. Pearton ◽

R. C. Fitch ◽

D. E. Walker ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4724207 ◽

2012 ◽

Vol 100 (22) ◽

pp. 223504 ◽

Cited By ~ 6

Author(s):

Weikai Xu ◽

Hemant Rao ◽

Gijs Bosman

Keyword(s):

Space Charge ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

Space Charge Limited

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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Gate Structure

ECS Meeting Abstracts ◽

10.1149/ma2011-02/31/2082 ◽

2011 ◽

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Structure ◽

State Stress

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Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization

ECS Transactions ◽

10.1149/1.3629954 ◽

2019 ◽

Vol 41 (6) ◽

pp. 63-70 ◽

Cited By ~ 1

Author(s):

Chien-Fong Lo ◽

Lu Liu ◽

Tsung-Sheng Kang ◽

Ryan Davies ◽

Brent P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Critical Voltage ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Applied Physics Letters ◽

10.1063/1.4913841 ◽

2015 ◽

Vol 106 (8) ◽

pp. 083508 ◽

Cited By ~ 13

Author(s):

M. J. Anand ◽

G. I. Ng ◽

S. Arulkumaran ◽

C. M. Manoj Kumar ◽

K. Ranjan ◽

...

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

State Stress

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Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

2007 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2007.4418953 ◽

2007 ◽

Cited By ~ 46

Author(s):

Jungwoo Joh ◽

Ling Xia ◽

Jesus A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Degradation Mechanisms ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors

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Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

Applied Physics Letters ◽

10.1063/1.4907261 ◽

2015 ◽

Vol 106 (4) ◽

pp. 043505 ◽

Cited By ~ 13

Author(s):

Huarui Sun ◽

Miguel Montes Bajo ◽

Michael J. Uren ◽

Martin Kuball

Keyword(s):

Temperature Dependence ◽

Electron Mobility ◽

Progressive Failure ◽

High Electron Mobility Transistors ◽

High Electron ◽

Weibull Statistics ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Failure Site ◽

State Stress

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