Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing

Hyeongnam Kim; Jaesun Lee; Dongmin Liu; Wu Lu

doi:10.1063/1.1899255

Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing

Applied Physics Letters ◽

10.1063/1.1899255 ◽

2005 ◽

Vol 86 (14) ◽

pp. 143505 ◽

Cited By ~ 59

Author(s):

Hyeongnam Kim ◽

Jaesun Lee ◽

Dongmin Liu ◽

Wu Lu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Current Leakage ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

Breakdown Mechanism

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On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Applied Physics Letters ◽

10.1063/1.4737904 ◽

2012 ◽

Vol 101 (3) ◽

pp. 033508 ◽

Cited By ~ 47

Author(s):

M. Montes Bajo ◽

C. Hodges ◽

M. J. Uren ◽

M. Kuball

Keyword(s):

Electron Mobility ◽

Surface Defects ◽

High Electron Mobility Transistors ◽

High Electron ◽

Current Leakage ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

State Stress

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Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3701164 ◽

2012 ◽

Vol 100 (14) ◽

pp. 143507 ◽

Cited By ~ 11

Author(s):

P. Marko ◽

A. Alexewicz ◽

O. Hilt ◽

G. Meneghesso ◽

E. Zanoni ◽

...

Keyword(s):

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Random Telegraph Signal ◽

Signal Noise ◽

Electron Mobility Transistors

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Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.120477 ◽

1997 ◽

Vol 71 (25) ◽

pp. 3673-3675 ◽

Cited By ~ 50

Author(s):

R. Gaska ◽

J. W. Yang ◽

A. Osinsky ◽

A. D. Bykhovski ◽

M. S. Shur

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4724207 ◽

2012 ◽

Vol 100 (22) ◽

pp. 223504 ◽

Cited By ~ 6

Author(s):

Weikai Xu ◽

Hemant Rao ◽

Gijs Bosman

Keyword(s):

Space Charge ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

Space Charge Limited

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Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

2007 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2007.4418953 ◽

2007 ◽

Cited By ~ 46

Author(s):

Jungwoo Joh ◽

Ling Xia ◽

Jesus A. del Alamo

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Degradation Mechanisms ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors

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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2015.2465137 ◽

2015 ◽

Vol 36 (10) ◽

pp. 1001-1003 ◽

Cited By ~ 79

Author(s):

Tian-Li Wu ◽

Denis Marcon ◽

Shuzhen You ◽

Niels Posthuma ◽

Benoit Bakeroot ◽

...

Keyword(s):

Electron Mobility ◽

Forward Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Breakdown Mechanism

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Reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors

Journal of Applied Physics ◽

10.1063/1.4764866 ◽

2012 ◽

Vol 112 (9) ◽

pp. 094508 ◽

Cited By ~ 8

Author(s):

Rik Jos

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors

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Space charge limited gate current noise in AlGaN/GaN high Electron Mobility Transistors

2013 22nd International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2013.6578955 ◽

2013 ◽

Author(s):

Weikai Xu ◽

Gijs Bosman

Keyword(s):

Space Charge ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Current Noise ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors ◽

Space Charge Limited

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Low frequency gate current noise in high electron mobility transistors: experimental analysis

IEEE Electron Device Letters ◽

10.1109/55.363238 ◽

1995 ◽

Vol 16 (3) ◽

pp. 103-105 ◽

Cited By ~ 9

Author(s):

G. Bertuccio ◽

G. de Geronimo ◽

A. Longoni ◽

A. Pullia

Keyword(s):

Electron Mobility ◽

Experimental Analysis ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Current Noise ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Electron Mobility Transistors

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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