scholarly journals Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

2015 ◽  
Vol 106 (4) ◽  
pp. 043505 ◽  
Author(s):  
Huarui Sun ◽  
Miguel Montes Bajo ◽  
Michael J. Uren ◽  
Martin Kuball
Keyword(s):  
Temperature Dependence ◽  
Electron Mobility ◽  
Progressive Failure ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Weibull Statistics ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Failure Site ◽  
State Stress

Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress

2015 ◽  
Vol 8 (10) ◽  
pp. 104101 ◽  
Author(s):  
Mulagumoottil Jesudas Anand ◽  
Geok Ing Ng ◽  
Subramaniam Arulkumaran ◽  
Binit Syamal ◽  
Xing Zhou
Keyword(s):  
Energy Level ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Trap Energy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
State Stress

Effect of the Source Field Plate on AlGaN/GaN High Electron Mobility Transistors during Off-State Stress

2019 ◽  
Vol 41 (6) ◽  
pp. 41-49
Author(s):  
Lu Liu ◽  
Tsung-Sheng Kang ◽  
David A. Cullen ◽  
Lin Zhou ◽  
Jinhyung Kim ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Source Field ◽  
State Stress
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