Role of the substrate in the electrical transport characteristics of focused ion beam fabricated nanogap electrode

2012 ◽  
Vol 112 (2) ◽  
pp. 024310 ◽  
Author(s):  
Nitul S. Rajput ◽  
Abhishek K. Singh ◽  
H. C. Verma
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Focused-ion-beam fabricated charge density wave devices

2002 ◽  
Vol 12 (9) ◽  
pp. 103-108
Author(s):  
E. Slot ◽  
H. S.J. van der Zant
Keyword(s):  
Charge Density ◽  
Electrical Transport ◽  
Charge Density Wave ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Density Wave ◽  
Finite Size ◽  
Mode Locking ◽  
Crystal Properties ◽  
Geometrical Effects

We have fabricated a variety of Charge-Density-Wave (CDW) devices using a focused-ion-beam (FIB) process. The FIB is used to etch any desired geometry in crystals, like constrictions, tears, trenches, zigzag patterns etcetera. We have studied the electrical transport of these devices. This study includes: finite size effects (e.g. dependence of the threshold for CDW sliding on the width while maintaining the same thickness of samples), conduction perpendicular to the chains, geometrical effects and CDW junctions. We have found complete mode-locking on CDW constrictions, indicating that the high-quality crystal properties are preserved after FIB processing. This makes the process a useful technique to study submicron CDW dynamics.

Rapid Nanomanufacturing of Metallic Break Junctions Using Focused Ion Beam Scratching and Electromigration

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Waseem Asghar ◽  
Priyanka P. Ramachandran ◽  
Adegbenro Adewumi ◽  
Mohammud R. Noor ◽  
Samir M. Iqbal
Keyword(s):  
Molecular Electronics ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Yield ◽  
Electrical Transport Properties ◽  
Metal Line ◽  
Break Junctions ◽  
Current Voltage ◽  
Before And After

Break junctions provide a direct way to interrogate electrical transport properties of molecules, in pursuit of molecular electronics devices. A number of approaches are used for the fabrication of break junctions, including optical/e-beam lithography, electromigration, mechanical control of suspended conductive electrodes/strips, and electrochemical deposition of conductive material and nanowires. All approaches either require serial and slow e-beam writing of nanoscale gaps or suffer from low-yield of nanogap electrode devices. Here, we report the use of focused ion beam (FIB) to “scratch” and remove a thin layer of gold from 3 μm wide lines. The scratch results in thinning of the metal line and subsequent current-driven electromigration results into nanogaps at precise locations with high yield of devices. Combining FIB scratching with electromigration provides an elegant approach of creating nanoscale break junctions at an exact location and with a very narrow distribution of the nanogap sizes. Current-voltage measurements are done using a probe station before and after FIB scratch, and after the breaks were formed. Most of the gaps fall within 200–300 nm range and show negligible conductivity. The approach provides a novel, rapid, and high-throughput manufacturing approach of break junction fabrication that can be used for molecular sensing.

Effects of Pt Junction on Electrical Transport of Individual ZnO Nanorod Device Fabricated by Focused Ion Beam

2012 ◽  
Vol 12 (2) ◽  
pp. 1466-1470 ◽  
Author(s):  
Sang-Won Yoon ◽  
Jong-Hyun Seo ◽  
Tae-Yeon Seong ◽  
Hoon Kwon ◽  
Kon Bae Lee ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorod

Focused ion beam fabrication and magneto-electrical transport properties of La0.67Ca0.33MnO3 nanobridge

2014 ◽  
Vol 115 (3) ◽  
pp. 791-795 ◽  
Author(s):  
Y. J. Li ◽  
D. Y. Dong ◽  
S. L. Wang ◽  
Z. P. Wu ◽  
C. Cui ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Transport Properties

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2020 ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Katja Barthelmi ◽  
Katherine Cochrane ◽  
Jonas Kiemle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Ana Micevic ◽  
Daniel Hernangómez-Pérez ◽  
Katja Barthelmi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

AbstractFor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

scholarly journals Non-Covalent Bonding Caught in Action: From Amorphous-to-Cocrystalline Molecular Thin Films

2021 ◽  
Author(s):  
Olga Chovnik ◽  
Sidney Cohen ◽  
Iddo Pinkas ◽  
Lothar Houben ◽  
Tatiana E. Gorelik ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Crystallization Process ◽  
Metastable Phase ◽  
Ion Beam ◽  
Diffusion Mechanism ◽  
Halogen Bonding ◽  
Amorphous Films ◽  
Solid Diffusion ◽  
Surface Transformation

<p>We demonstrate the solvent-free amorphous-to-cocrystalline transformations of nanoscale molecular films. Exposing amorphous films to vapors of a haloarene results in the formation of a cocrystalline coating. This transformation proceeds by gradual strengthening of halogen-bonding interactions as a result of the crystallization process. The gas-solid diffusion mechanism involves formation of an amorphous metastable phase prior to crystallization of the films. <i>In-situ </i>optical microscopy shows mass transport during this process, which is confirmed by cross-section analysis of the final structures using focused ion beam (FIB) milling combined with scanning electron microscopy (SEM). Nanomechanical measurements support the role of rigidity of the amorphous films influences the crystallization process. This surface transformation results in molecular arrangements that are not readily obtained through other means. Whereas cocrystals grown in solution crystallize in a monoclinic centrosymmetric space group, whereas the on-surface halogen-bonded assembly crystallizes into a noncentrosymmetric material with a bulk second-order non-linear optical (NLO) response.<br></p>

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