Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition

2012 ◽  
Vol 100 (5) ◽  
pp. 053103 ◽  
Author(s):  
J. H. Wu ◽  
R. S. Goldman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Surfaces ◽  
Nanorod Growth

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2020 ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Katja Barthelmi ◽  
Katherine Cochrane ◽  
Jonas Kiemle ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

Tomographic investigation of fermi level pinning at focused ion beam milled semiconductor surfaces

2013 ◽  
Vol 103 (26) ◽  
pp. 264104 ◽  
Author(s):  
D. Wolf ◽  
A. Lubk ◽  
A. Lenk ◽  
S. Sturm ◽  
H. Lichte
Keyword(s):  
Fermi Level ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Surfaces ◽  
Fermi Level Pinning

scholarly journals The role of chalcogen vacancies for atomic defect emission in MoS2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Ana Micevic ◽  
Daniel Hernangómez-Pérez ◽  
Katja Barthelmi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Single Photon ◽  
Ion Beam ◽  
Photon Emission ◽  
Defect Engineering ◽  
Single Photon Emission ◽  
2D Semiconductors ◽  
Ab Initio Theory ◽  
Resolution Imaging

AbstractFor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

scholarly journals Non-Covalent Bonding Caught in Action: From Amorphous-to-Cocrystalline Molecular Thin Films

2021 ◽  
Author(s):  
Olga Chovnik ◽  
Sidney Cohen ◽  
Iddo Pinkas ◽  
Lothar Houben ◽  
Tatiana E. Gorelik ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Crystallization Process ◽  
Metastable Phase ◽  
Ion Beam ◽  
Diffusion Mechanism ◽  
Halogen Bonding ◽  
Amorphous Films ◽  
Solid Diffusion ◽  
Surface Transformation

<p>We demonstrate the solvent-free amorphous-to-cocrystalline transformations of nanoscale molecular films. Exposing amorphous films to vapors of a haloarene results in the formation of a cocrystalline coating. This transformation proceeds by gradual strengthening of halogen-bonding interactions as a result of the crystallization process. The gas-solid diffusion mechanism involves formation of an amorphous metastable phase prior to crystallization of the films. <i>In-situ </i>optical microscopy shows mass transport during this process, which is confirmed by cross-section analysis of the final structures using focused ion beam (FIB) milling combined with scanning electron microscopy (SEM). Nanomechanical measurements support the role of rigidity of the amorphous films influences the crystallization process. This surface transformation results in molecular arrangements that are not readily obtained through other means. Whereas cocrystals grown in solution crystallize in a monoclinic centrosymmetric space group, whereas the on-surface halogen-bonded assembly crystallizes into a noncentrosymmetric material with a bulk second-order non-linear optical (NLO) response.<br></p>

The Calamistrum of the Feather-Legged Spider Uloborus plumipes Investigated by Focused Ion Beam and Scanning Electron Microscopy (FIB–SEM) Tomography

2018 ◽  
Vol 24 (2) ◽  
pp. 139-146 ◽  
Author(s):  
Alexander Heiss ◽  
Daesung Park ◽  
Anna-Christin Joel
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
New Materials ◽  
Three Dimensional Model ◽  
Fiber Processing ◽  
Scanning Electron

AbstractSpiders are natural specialists in fiber processing. In particular, cribellate spiders manifest this ability as they produce a wool of nanofibers to capture prey. During its production they deploy a sophisticated movement of their spinnerets to darn in the fibers as well as a comb-like row of setae, termed calamistrum, on the metatarsus which plays a key role in nanofiber processing. In comparison to the elaborate nanofiber extraction and handling process by the spider’s calamistrum, the human endeavors of spinning and handling of artificial nanofibers is still a primitive technical process. An implementation of biomimetics in spinning technology could lead to new materials and applications. Despite the general progress in related fields of nanoscience, the expected leap forward in spinning technology depends on a better understanding of the specific shapes and surfaces that control the forces at the nanoscale and that are involved in the mechanical processing of the nanofibers, respectively. In this study, the authors investigated the morphology of the calamistrum of the cribellate spider Uloborus plumipes. Focused ion beam and scanning electron microscopy tomography provided a good image contrast and the best trade-off between investigation volume and spatial resolution. A comprehensive three-dimensional model is presented and the putative role of the calamistrum in nanofiber processing is discussed.

scholarly journals FIB/SEM-based analysis of Borrelia intracellular processing by human macrophages

2020 ◽  
pp. jcs.252320
Author(s):  
Matthias Klose ◽  
Maximilian Scheungrab ◽  
Manja Luckner ◽  
Gerhard Wanner ◽  
Stefan Linder
Keyword(s):  
Live Cell Imaging ◽  
Focused Ion Beam ◽  
Cell Imaging ◽  
Ion Beam ◽  
Human Macrophages ◽  
Host Cytoplasm ◽  
Intracellular Processing ◽  
Membrane Tubulation ◽  
First Time

Borrelia burgdorferi is the causative agent of Lyme disease, a multisystemic disorder affecting primarily skin, joints and nervous system. Successful internalization and intracellular processing of borreliae by immune cells like macrophages is decisive for the outcome of a respective infection. Here, we use for the first time focused ion beam scanning electron microscopy tomography (FIB/SEM tomography) to visualize the interaction of borreliae with primary human macrophages with high resolution. We report that interaction between macrophages and the elongated and highly motile borreliae can lead to formation of membrane tunnels that extend deeper into the host cytoplasm than the actual phagosome, most probably as a result of partial extrication of captured borreliae. We also show that membrane tubulation at borreliae-containing phagosomes, a process suggested earlier as a mechanism leading to phagosome compaction, but hard to visualize in live cell imaging, is apparently a frequent phenomenon. Finally, we demonstrate that the endoplasmic reticulum (ER) forms multiple STIM1-positive contact sites with both membrane tunnels and phagosome tubulations, confirming the important role of the ER during uptake and intracellular processing of borreliae.

Role of the substrate in the electrical transport characteristics of focused ion beam fabricated nanogap electrode

2012 ◽  
Vol 112 (2) ◽  
pp. 024310 ◽  
Author(s):  
Nitul S. Rajput ◽  
Abhishek K. Singh ◽  
H. C. Verma
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam
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