Effects of Pt Junction on Electrical Transport of Individual ZnO Nanorod Device Fabricated by Focused Ion Beam

2012 ◽  
Vol 12 (2) ◽  
pp. 1466-1470 ◽  
Author(s):  
Sang-Won Yoon ◽  
Jong-Hyun Seo ◽  
Tae-Yeon Seong ◽  
Hoon Kwon ◽  
Kon Bae Lee ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorod

Focused-ion-beam fabricated charge density wave devices

2002 ◽  
Vol 12 (9) ◽  
pp. 103-108
Author(s):  
E. Slot ◽  
H. S.J. van der Zant
Keyword(s):  
Charge Density ◽  
Electrical Transport ◽  
Charge Density Wave ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Density Wave ◽  
Finite Size ◽  
Mode Locking ◽  
Crystal Properties ◽  
Geometrical Effects

We have fabricated a variety of Charge-Density-Wave (CDW) devices using a focused-ion-beam (FIB) process. The FIB is used to etch any desired geometry in crystals, like constrictions, tears, trenches, zigzag patterns etcetera. We have studied the electrical transport of these devices. This study includes: finite size effects (e.g. dependence of the threshold for CDW sliding on the width while maintaining the same thickness of samples), conduction perpendicular to the chains, geometrical effects and CDW junctions. We have found complete mode-locking on CDW constrictions, indicating that the high-quality crystal properties are preserved after FIB processing. This makes the process a useful technique to study submicron CDW dynamics.

Rapid Nanomanufacturing of Metallic Break Junctions Using Focused Ion Beam Scratching and Electromigration

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Waseem Asghar ◽  
Priyanka P. Ramachandran ◽  
Adegbenro Adewumi ◽  
Mohammud R. Noor ◽  
Samir M. Iqbal
Keyword(s):  
Molecular Electronics ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Yield ◽  
Electrical Transport Properties ◽  
Metal Line ◽  
Break Junctions ◽  
Current Voltage ◽  
Before And After

Break junctions provide a direct way to interrogate electrical transport properties of molecules, in pursuit of molecular electronics devices. A number of approaches are used for the fabrication of break junctions, including optical/e-beam lithography, electromigration, mechanical control of suspended conductive electrodes/strips, and electrochemical deposition of conductive material and nanowires. All approaches either require serial and slow e-beam writing of nanoscale gaps or suffer from low-yield of nanogap electrode devices. Here, we report the use of focused ion beam (FIB) to “scratch” and remove a thin layer of gold from 3 μm wide lines. The scratch results in thinning of the metal line and subsequent current-driven electromigration results into nanogaps at precise locations with high yield of devices. Combining FIB scratching with electromigration provides an elegant approach of creating nanoscale break junctions at an exact location and with a very narrow distribution of the nanogap sizes. Current-voltage measurements are done using a probe station before and after FIB scratch, and after the breaks were formed. Most of the gaps fall within 200–300 nm range and show negligible conductivity. The approach provides a novel, rapid, and high-throughput manufacturing approach of break junction fabrication that can be used for molecular sensing.

Focused-ion-beam fabrication of ZnO nanorod-based UV photodetector using the in-situ lift-out technique

2008 ◽  
Vol 205 (11) ◽  
pp. 2673-2678 ◽  
Author(s):  
Oleg Lupan ◽  
Lee Chow ◽  
Guangyu Chai ◽  
Leonid Chernyak ◽  
Olena Lopatiuk-Tirpak ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorod ◽  
Uv Photodetector

Focused ion beam fabrication and magneto-electrical transport properties of La0.67Ca0.33MnO3 nanobridge

2014 ◽  
Vol 115 (3) ◽  
pp. 791-795 ◽  
Author(s):  
Y. J. Li ◽  
D. Y. Dong ◽  
S. L. Wang ◽  
Z. P. Wu ◽  
C. Cui ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Transport Properties

Role of the substrate in the electrical transport characteristics of focused ion beam fabricated nanogap electrode

2012 ◽  
Vol 112 (2) ◽  
pp. 024310 ◽  
Author(s):  
Nitul S. Rajput ◽  
Abhishek K. Singh ◽  
H. C. Verma
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam

Electrical Transport Phenomena of Single ZnO Nanowire Device Directly Measured Using Nano Manipulator

2010 ◽  
Vol 1258 ◽  
Author(s):  
Sang Won Yoon ◽  
Jong-Hyun Seo ◽  
Tae-Yeon Seong ◽  
Hoon Kwon ◽  
Kon Bae Lee ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Piezoresponse Force Microscopy ◽  
Contact Problems ◽  
Electrical Mobility ◽  
Zno Nanowire ◽  
The Cross ◽  
Nanowire Device

AbstractZnO nanowire (NW) has potential applications for transparent electrodes, gas sensors, nanoscale optoelectronic devices, piezoresponse force microscopy (PFM) and field effect transistors. In general, we have evaluated the electrical properties of nanowire device from I-V curves measured mainly from the bundle-like ensemble structure of ZnO, not individual ZnO NWs. Most applications require details on the electrical mobility of ZnO NWs. Recently, the electrical transport of single ZnO NWs has been studied only from several devices fabricated by electron-beam lithography. However their I-V curves categorized into three types of resistance, i.e., symmetrical, rectifying and linear shapes due to contact problems between ZnO NWs and electrodes, results in contradictory.In this paper, we manufactured single NW device using an individual ZnO nanowire, of which the junctions were made by Pt deposition using a focused ion beam (FIB), and performed RTA processes. The single ZnO NW device consists of ZnO-Pt, ZnO-Au and Au-Pt junctions. The electrical transport of the single ZnO NW device was investigated by directly measuring the electrical resistance using nano manipulators from cross-sectioned devices. The device showed a typical Ohmic contact in I-V curves and the resistance was decrease with the RTA temperature. The CL (Cathodoluminescence) and EDS in TEM (Energy dispersive spectroscopy in transmission electron microscopy) measurements were also performed to evaluate the crystallinity (defect level) and chemical composition at the center and edge of the cross-sectioned ZnO NWs. From the results, we found that lots of defects were stored at the surface of ZnO NW and impurities at the junction were abruptly reduced. Therefore, the electrical transport of the single ZnO NW device depends strongly on the crystallinity of the ZnO NW and the C content at the Pt junction. From the electrical transport measured on the cross sectioned device, the ZnO-Au junction acted as the fastest transport path among ZnO-Pt, ZnO-Au and Au-Pt junctions in the single ZnO NW device.

Dielectrophoretic Deposition of Graphite Oxide Soot Particles

2008 ◽  
Vol 8 (1) ◽  
pp. 424-427 ◽  
Author(s):  
Seunghyun Hong ◽  
Sehun Jung ◽  
Sunjung Kang ◽  
Youngjin Kim ◽  
Xinqi Chen ◽  
...  
Keyword(s):  
Cross Section ◽  
Graphite Oxide ◽  
Electrical Transport ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Contact ◽  
Peak Voltage ◽  
Soot Particles ◽  
Device Applications ◽  
Platelet Structure

Alternating current dielectrophoresis in water was used to position graphite oxide soot (GO-soot) particles generated by rapid thermal expansion of graphite oxide under inert gas. The dielectrophoretic deposition was carried out at a frequency of 10 MHz and a peak-to-peak voltage of 10 V, and the deposited particles were analyzed using scanning electron microscopy. The vertical cross section, obtained by focused ion beam cutting, shows the wrinkled layers of the GO-soot particles and cavities between the layers. The electrical transport measurements show typical characteristics of metal-like pathways. The improved electrical contact between electrodes and GO-soot, probably due to the thin platelet structure of GO-soot, makes the material favorable for electrical device applications. The results demonstrate that AC dielectrophoresis can be used to selectively deposit graphite oxide soot particles at desired locations.

ELECTRICAL TRANSPORT CHARACTERISTICS OF FOCUSED ION BEAM FABRICATED Au, Cu NANOWIRES

2011 ◽  
Vol 10 (01n02) ◽  
pp. 7-12 ◽  
Author(s):  
NITUL S. RAJPUT ◽  
ABHISHEK K. SINGH ◽  
NEERAJ SHUKLA ◽  
VISHWAS N. KULKARNI
Keyword(s):  
Electrical Transport ◽  
Structural Changes ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Milling Process ◽  
Surface Scattering ◽  
Electrical Measurements ◽  
One Dimensional ◽  
Cu Nanowires

Nanowires of Au and Cu were fabricated using a top–down method in which focused ion beam (FIB) milling process has been used. The width of the fabricated nanowires has been kept in the range of 45 to 300 nm and the length in the range of 2–10 μm. In situ electrical measurements of the nanowires were carried out. The resistivities of these wires are found to be higher (five to nine times larger than their bulk values). These results have been understood on the basis of increase in the electron surface scattering due to one-dimensional confinement of the electrons. Also, other effects such as nanogap formation in the range of 40 nm to few hundreds of nanometers, structural changes of the wires, increase of current density with time at constant applied voltage, etc. have been observed during measurements.

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