scholarly journals Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures

2012 ◽  
Vol 112 (2) ◽  
pp. 024324 ◽  
Author(s):  
B. Dridi Rezgui ◽  
F. Gourbilleau ◽  
D. Maestre ◽  
O. Palais ◽  
A. Sibai ◽  
...  
2014 ◽  
Vol 118 (34) ◽  
pp. 19580-19588 ◽  
Author(s):  
Ting Chen ◽  
Brian Skinner ◽  
Wei Xie ◽  
B. I. Shklovskii ◽  
Uwe R. Kortshagen

2013 ◽  
Vol 102 (3) ◽  
pp. 033507 ◽  
Author(s):  
Philipp Löper ◽  
Mariaconcetta Canino ◽  
Dureid Qazzazie ◽  
Manuel Schnabel ◽  
Marco Allegrezza ◽  
...  

2013 ◽  
Vol 102 (10) ◽  
pp. 109902 ◽  
Author(s):  
Philipp Löper ◽  
Mariaconcetta Canino ◽  
Dureid Qazzazie ◽  
Manuel Schnabel ◽  
Marco Allegrezza ◽  
...  

1986 ◽  
Vol 77 ◽  
Author(s):  
H. T. Grahn ◽  
Z. Vardeny ◽  
H. J. Maris ◽  
J. Tauc ◽  
B. Abeles

ABSTRACTWe report on measurements of ultrafast relaxation processes in transmission and reflection in amorphous multilayer structures consisting of a-Si:H, a-SiNx:H, a-SiOx:H, and a-Ge:H. The decays recorded in transmission in the a-Si:H/a-SiNx:H and a-Si:H/a-SiOx:H multilayers depend strongly on the silicon sublayer thickness and are interpreted in terms of carrier transport to and trapping at interfacial defects. In the a-Si:H/a-Ge:H multilayers we observe oscillations in reflectivity due to standing acoustic waves with a frequency that depends on the repeat distance of the multilayer.


2006 ◽  
Vol 40 (9) ◽  
pp. 1052-1054 ◽  
Author(s):  
Yu. V. Ryabchikov ◽  
P. A. Forsh ◽  
E. A. Lebedev ◽  
V. Yu. Timoshenko ◽  
P. K. Kashkarov ◽  
...  

1989 ◽  
Vol 60 (1) ◽  
pp. 79-87 ◽  
Author(s):  
Hajime Shirai ◽  
Akihito Tanabe ◽  
Masami Nakata ◽  
Isamu Shimizu

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