scholarly journals Carrier Transport in Films of Alkyl-Ligand-Terminated Silicon Nanocrystals

2014 ◽  
Vol 118 (34) ◽  
pp. 19580-19588 ◽  
Author(s):  
Ting Chen ◽  
Brian Skinner ◽  
Wei Xie ◽  
B. I. Shklovskii ◽  
Uwe R. Kortshagen
Keyword(s):  
Silicon Nanocrystals ◽  
Carrier Transport

scholarly journals Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures

2012 ◽  
Vol 112 (2) ◽  
pp. 024324 ◽  
Author(s):  
B. Dridi Rezgui ◽  
F. Gourbilleau ◽  
D. Maestre ◽  
O. Palais ◽  
A. Sibai ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Multilayer Structures

Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination

2013 ◽  
Vol 102 (3) ◽  
pp. 033507 ◽  
Author(s):  
Philipp Löper ◽  
Mariaconcetta Canino ◽  
Dureid Qazzazie ◽  
Manuel Schnabel ◽  
Marco Allegrezza ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge Carrier ◽  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Charge Carrier Transport

scholarly journals Publisher's Note: “Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination” [Appl. Phys. Lett. 102, 033507 (2013)]

2013 ◽  
Vol 102 (10) ◽  
pp. 109902 ◽  
Author(s):  
Philipp Löper ◽  
Mariaconcetta Canino ◽  
Dureid Qazzazie ◽  
Manuel Schnabel ◽  
Marco Allegrezza ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Charge Carrier ◽  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Charge Carrier Transport

Charge carrier transport in a structure with silicon nanocrystals embedded into oxide matrix

2006 ◽  
Vol 40 (9) ◽  
pp. 1052-1054 ◽  
Author(s):  
Yu. V. Ryabchikov ◽  
P. A. Forsh ◽  
E. A. Lebedev ◽  
V. Yu. Timoshenko ◽  
P. K. Kashkarov ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Oxide Matrix

scholarly journals The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
Dan Shan ◽  
Yunqing Cao ◽  
Ruihong Yang ◽  
Hongyu Wang ◽  
Tao Tao
Keyword(s):  
Transport Properties ◽  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Insulator ◽  
Nanocrystal Films ◽  
B Doping ◽  
Hydrogenated Amorphous ◽  
Carrier Transport Properties

B-doped hydrogenated amorphous silicon (a-Si:H) films with various doping concentrations were prepared by a plasma-enhanced chemical vapor deposition (PECVD) technique. After thermal annealing, the as-deposited samples, B-doped silicon nanocrystals (Si NCs), were obtained in the films. The electronic properties of B-doped Si NC films with various doping concentrations combined with the microstructural characterization were investigated. A significant improvement of Hall mobility rising to the maximum of 17.8 cm2/V·s was achieved in the Si NC film after B doping, which is due to the reduction of grain boundary (GB) scattering in the B-doped samples. With increasing the doping concentration, it was interesting to find that a metal-insulator transition (MIT) took place in the B-doped Si NC films with high doping concentrations. The different carrier transport properties in the B-doped Si NC films with various doping concentrations were investigated and further discussed with emphasis on the scattering mechanisms in the transport process.

Impact of Erbium-Doped Silicon Nanocrystals on the Properties of Polyphenylene Vinylene Films

2000 ◽  
Vol 638 ◽  
Author(s):  
Jeffery L. Coffer ◽  
Junmin Ji
Keyword(s):  
Silicon Nanocrystals ◽  
Carrier Transport ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Nanocrystals ◽  
Current Voltage ◽  
Erbium Doped ◽  
Polyphenylene Vinylene ◽  
Er Doped

AbstractThis work describes our initial studies of Er-doped Si nanocrystal/poly(phenylene vinylene) (PPV) composites. Preliminary results have focused on the characterization of these materials via atomic force microscopy (AFM), profilometry, absorption/fluorescence spectroscopies, and current-voltage measurements. A particular point of emphasis here concerns the influence of the Er-doped Si nanocrystals on PPV photoluminescence and carrier transport.

Photoluminescence behavior of silicon nanocrystals: Role of surface chemistry and size

2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers
Keyword(s):  
Surface Chemistry ◽  
Silicon Nanocrystals ◽  
Photoluminescence Behavior

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Pump-Probe Measurements Using Silicon Nanocrystal Waveguides

2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman
Keyword(s):  
Probe Beam ◽  
Time Resolution ◽  
Pump Beam ◽  
Silicon Nanocrystals ◽  
Continuous Wave ◽  
Optical Gain ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe ◽  
Probe Measurements

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.

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