Picosecond Dynamics of Photoexcitations in Amorphous Multilayer Structures
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ABSTRACTWe report on measurements of ultrafast relaxation processes in transmission and reflection in amorphous multilayer structures consisting of a-Si:H, a-SiNx:H, a-SiOx:H, and a-Ge:H. The decays recorded in transmission in the a-Si:H/a-SiNx:H and a-Si:H/a-SiOx:H multilayers depend strongly on the silicon sublayer thickness and are interpreted in terms of carrier transport to and trapping at interfacial defects. In the a-Si:H/a-Ge:H multilayers we observe oscillations in reflectivity due to standing acoustic waves with a frequency that depends on the repeat distance of the multilayer.
2000 ◽
Vol 62
(15)
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pp. 10083-10087
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2014 ◽
Vol 136
(26)
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pp. 9327-9337
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