Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing

2012 ◽  
Vol 100 (24) ◽  
pp. 242412 ◽  
Author(s):  
C. H. Chen ◽  
H. Niu ◽  
D. C. Yan ◽  
H. H. Hsieh ◽  
C. P. Lee ◽  
...  
2001 ◽  
Vol 674 ◽  
Author(s):  
Jason D. Wright ◽  
Kannan M. Krishnan

ABSTRACTThe modification of conventional longitudinal recording media by ion-beam irradiation is of both scientific and technological interest. In particular, patterning by irradiation through a stencil mask at the 50 nm length scale may fulfill the promise of a commercially viable patterned media architecture. In this context, the magnetic properties and microstructural evolution of high-coercivity longitudinal thin film media were investigated after ion-beam irradiation. TRIM simulations were used to calculate the depth profiles and damage distributions as a function of energy and dose for carbon, nitrogen, and chromium ions and three different media (C, Cr, no capping layer). Corresponding implantations were carried out and hysteresis curves were measured using a vibrating sample magnetometer (VSM). Using chromium ion implantation at 20 keV, both remanence and coercivity were reduced to zero, i.e., rendering the ferromagnetic thin film paramagnetic, at doses as low as 1×1016 cm−2. For C+ implantation at 20 keV, remanence and coercivity were also reduced to varying extent up to doses of 5×1016 cm−2 after which further irradiation had no effect. Slight decreases in remanence and coercivity were observed for 20 keV N2+ irradiation. XRD measurements indicate that the hexagonal cobalt alloy phase remains intact after irradiation. The physical and magnetic domain structures at the surface were assessed by atomic force and magnetic force microscopy. Combined with the development of a suitable stencil mask, such chromium ion implantation can be used to develop a viable patterned media with nanoscale dimensions, consisting of locally defined ferromagnetic and paramagnetic regions. This work is in progress.


1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.


1996 ◽  
Vol 100-101 ◽  
pp. 498-502 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  

1988 ◽  
Vol 100 ◽  
Author(s):  
T. E. Haynes ◽  
S. T. Picraux ◽  
S. R. Lee ◽  
W. K. Chu

ABSTRACTIon implantation has been used to modify the initial stress in thin (40 nm) SiO2 films on G a As, and to condition the SiO2-G a As interface to pro mote adhesion. The effectiveness of these implanted films as caps to suppress decomposition of GaAs during rapid thermal processing has been studied, and this provides an indicator of the mechanical stability of the films. Measurements of the initial film stress, as well as stress changes caused by implantation and annealing, have been made to help interpret the implantation results. Our results indicate that ion implantation does not have a strong effect on the performance of thin film SiO2 encapsulants on GaAs.


1993 ◽  
Vol 316 ◽  
Author(s):  
Naoto Kobayashi ◽  
Masataka Hasegawa ◽  
J.R. Phillips ◽  
Nobuyuki Hayashi ◽  
Hisao Tanoue ◽  
...  

ABSTRACTFabrication of Si1-xGex and Si-1-x-yGexCy layers on Si(100) by high-dose ion implantation of 72Ge ions without and with 12C ions and subsequent high-energy and low-energy ion-beam-induced epitaxial crystallization (IBIEC) has been investigated. Structural properties of the surface layers were observed by RBS-channeling technique. Si(100) wafers were implanted with 150keV and 80keV Ge ions at room temperature so as to produce a peak concentration of Ge amounting to approximately 2 and 14 at.%, respectively. C ions were additionally implanted to a fluence of 10% of Ge concentration for the SiGeC samples. IBΓEC experiments performed with 400keV 18Ar ion bombardments have induced crystallization of the amorphous layers of SiGe and SiGeC on Si up to the surface at 400°C for both samples with low Ge concentration (2%) and high Ge concentration (14%). IBIEC using 72Ge ions with energies whose projected ranges are within the amorphous layer was alternatively performed for SiGe layer on Si. Bombardments of 140keV and 40keV Ge ions at 400°C have induced crystallization up to the surface with a slight disorder in the grown layer. Present experimental results suggest a novel ion beam synthesis method of fabrication of SiGe (SiGeC) on Si at low temperatures.


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