Ion Beam Modification of Film Stress and the Effectiveness of Thin Film Encapsulants on GaAs

1988 ◽  
Vol 100 ◽  
Author(s):  
T. E. Haynes ◽  
S. T. Picraux ◽  
S. R. Lee ◽  
W. K. Chu
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Thermal Processing ◽  
Mechanical Stability ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Film Stress ◽  
Ion Beam Modification ◽  
Stress Changes ◽  
As Stress

ABSTRACTIon implantation has been used to modify the initial stress in thin (40 nm) SiO2 films on G a As, and to condition the SiO2-G a As interface to pro mote adhesion. The effectiveness of these implanted films as caps to suppress decomposition of GaAs during rapid thermal processing has been studied, and this provides an indicator of the mechanical stability of the films. Measurements of the initial film stress, as well as stress changes caused by implantation and annealing, have been made to help interpret the implantation results. Our results indicate that ion implantation does not have a strong effect on the performance of thin film SiO2 encapsulants on GaAs.

Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Stress and Warpage Studies of Silicon Based Plain and Patterned Films During Rapid Thermal Processing (RTP)

1993 ◽  
Vol 303 ◽  
Author(s):  
R.P.S. Thakur ◽  
A. Martin ◽  
W.T. Fackrell ◽  
R. Barbour ◽  
J. L. Kawski ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
High Stress ◽  
Film Stress ◽  
Dislocation Slip ◽  
Cmos Process ◽  
Destructive Interference ◽  
Data Set ◽  
Patterned Structures

ABSTRACTSingle wafer rapid thermal processing (RTP) is emerging as a key player in the processing of advanced sub-half micron memory devices. The high temperature processing of large diameter silicon wafers can create sufficient thermal stress for generation of dislocation, slip, and gross mechanical instability of the wafer. The aforementioned factors may lead to loss of device yield, dielectric defects, and reduced photolithographic yield due to degradation of virtual wafer flatness. Moreover, the loss of geometrical planarity of wafer due to warpage can make it impossible to process a wafer or can lead to self-fracture of the wafer.In this paper we present the warpage and stress results of our study on plain and patterned structures that were subjected to RTP at different stages of the CMOS process flow. Experimental results have been gathered with full wafer scanning technology using non-contact capacitive probes to measure more accurate global stress values. The stress and warpage values on the patterned wafers could be measured accurately without any light scattering effects and destructive interference. It is reported that the thermal processing creates significant variations in shape change around the wafer which could be identified using the full wafer data set acquired using this evaluation technique. We have successfully tracked variations in film stress for both plain and patterned structures as a cumulative effect and correlated it with the overall wafer warpage. The effects of incoming wafer warpage, ramp rate in RTP, and high stress nitride films on the overall wafer warpage are also reported.

Thin Film Synthesis of Ti3SiC2by Rapid Thermal Processing of Magnetron-Sputtered TiCSi Multilayer Systems

2012 ◽  
Vol 15 (4) ◽  
pp. 269-275 ◽  
Author(s):  
Marcus Hopfeld ◽  
Rolf Grieseler ◽  
Thomas Kups ◽  
Marcus Wilke ◽  
Peter Schaaf
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Multilayer Systems ◽  
Film Synthesis

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2 Layers

2000 ◽  
Vol 647 ◽  
Author(s):  
Sabina Spiga ◽  
Sandro Ferrari ◽  
Marco Fanciulli ◽  
Bernd Schmidt ◽  
Karl-Heinz Heinig ◽  
...  
Keyword(s):  
Size Distribution ◽  
Thermal Processing ◽  
Cluster Size ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Cluster Size Distribution ◽  
Process Conditions ◽  
Ion Beam Synthesis ◽  
Kinetics Of ◽  
Implantation Fluence

AbstractIn this work we investigate the ion beam synthesis of Sn and Sb clusters in thin oxides. 80 keV (fluences of 0.1-1 × 1016 cm−2) Sn implantation in 85 nm thick SiO2, followed by annealing (800-1000°C for 30-300 sec under Ar or N 2 dry ambient) in a rapid thermal processing (RTP) system, leads to the formation of two cluster bands, near the middle of the SiO2 layer and the Si/SiO2 interface. In addition, big isolated clusters are randomly distributed between the two bands. Cluster-size distribution and cluster-crystallinity are related to implantation fluence and annealing time. Low energy (10-12 keV) Sb and Sn implantation (fluences 2-5 × 1015 cm−2) leads to the formation of very uniform cluster-size distribution. Under specific process conditions, only an interface cluster band is observed.

Modification of the magnetic properties of longitudinal thin-film media by ion-beam irradiation

2001 ◽  
Vol 674 ◽  
Author(s):  
Jason D. Wright ◽  
Kannan M. Krishnan
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Ion Implantation ◽  
Ion Beam ◽  
High Coercivity ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Patterned Media ◽  
Chromium Ion ◽  
Stencil Mask

ABSTRACTThe modification of conventional longitudinal recording media by ion-beam irradiation is of both scientific and technological interest. In particular, patterning by irradiation through a stencil mask at the 50 nm length scale may fulfill the promise of a commercially viable patterned media architecture. In this context, the magnetic properties and microstructural evolution of high-coercivity longitudinal thin film media were investigated after ion-beam irradiation. TRIM simulations were used to calculate the depth profiles and damage distributions as a function of energy and dose for carbon, nitrogen, and chromium ions and three different media (C, Cr, no capping layer). Corresponding implantations were carried out and hysteresis curves were measured using a vibrating sample magnetometer (VSM). Using chromium ion implantation at 20 keV, both remanence and coercivity were reduced to zero, i.e., rendering the ferromagnetic thin film paramagnetic, at doses as low as 1×1016 cm−2. For C+ implantation at 20 keV, remanence and coercivity were also reduced to varying extent up to doses of 5×1016 cm−2 after which further irradiation had no effect. Slight decreases in remanence and coercivity were observed for 20 keV N2+ irradiation. XRD measurements indicate that the hexagonal cobalt alloy phase remains intact after irradiation. The physical and magnetic domain structures at the surface were assessed by atomic force and magnetic force microscopy. Combined with the development of a suitable stencil mask, such chromium ion implantation can be used to develop a viable patterned media with nanoscale dimensions, consisting of locally defined ferromagnetic and paramagnetic regions. This work is in progress.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing

2012 ◽  
Vol 100 (24) ◽  
pp. 242412 ◽  
Author(s):  
C. H. Chen ◽  
H. Niu ◽  
D. C. Yan ◽  
H. H. Hsieh ◽  
C. P. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Ion Beam ◽  
Epitaxial Crystallization
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