Formation of SiGe and SiGeC Layers on Si by Ge and C Ion Implantation and Subsequent Ion-Beam-Induced Epitaxial Crystallization

1993 ◽  
Vol 316 ◽  
Author(s):  
Naoto Kobayashi ◽  
Masataka Hasegawa ◽  
J.R. Phillips ◽  
Nobuyuki Hayashi ◽  
Hisao Tanoue ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Synthesis Method ◽  
Amorphous Layer ◽  
Sige Layer ◽  
High Energy ◽  
High Dose ◽  
Surface Layers ◽  
Epitaxial Crystallization ◽  
Induced Crystallization

ABSTRACTFabrication of Si1-xGex and Si-1-x-yGexCy layers on Si(100) by high-dose ion implantation of 72Ge ions without and with 12C ions and subsequent high-energy and low-energy ion-beam-induced epitaxial crystallization (IBIEC) has been investigated. Structural properties of the surface layers were observed by RBS-channeling technique. Si(100) wafers were implanted with 150keV and 80keV Ge ions at room temperature so as to produce a peak concentration of Ge amounting to approximately 2 and 14 at.%, respectively. C ions were additionally implanted to a fluence of 10% of Ge concentration for the SiGeC samples. IBΓEC experiments performed with 400keV 18Ar ion bombardments have induced crystallization of the amorphous layers of SiGe and SiGeC on Si up to the surface at 400°C for both samples with low Ge concentration (2%) and high Ge concentration (14%). IBIEC using 72Ge ions with energies whose projected ranges are within the amorphous layer was alternatively performed for SiGe layer on Si. Bombardments of 140keV and 40keV Ge ions at 400°C have induced crystallization up to the surface with a slight disorder in the grown layer. Present experimental results suggest a novel ion beam synthesis method of fabrication of SiGe (SiGeC) on Si at low temperatures.

scholarly journals Effect of Silicon, Titanium, and Zirconium Ion Implantation on NiTi Biocompatibility

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
L. L. Meisner ◽  
A. I. Lotkov ◽  
V. A. Matveeva ◽  
L. V. Artemieva ◽  
S. N. Meisner ◽  
...  
Keyword(s):  
Stem Cells ◽  
Flow Cytometry ◽  
Mesenchymal Stem Cells ◽  
Ion Implantation ◽  
Cell Counting ◽  
High Dose ◽  
Surface Layers ◽  
Test Flow ◽  
Ion Implanted

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

scholarly journals ION BEAM MATERIALS ANALYSIS AND MODIFICATIONS AT keV TO MeV ENERGIES AT THE UNIVERSITY OF NORTH TEXAS

2014 ◽  
Vol 27 ◽  
pp. 1460147 ◽  
Author(s):  
BIBHUDUTTA ROUT ◽  
MANGAL S. DHOUBHADEL ◽  
PRAKASH R. POUDEL ◽  
VENKATA C. KUMMARI ◽  
WICKRAMAARACHCHIGE J. LAKSHANTHA ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Nuclear Physics ◽  
Ion Beam ◽  
High Energy ◽  
Particle Accelerators ◽  
Educational Training ◽  
North Texas ◽  
University Of North Texas ◽  
Ion Beam Lithography ◽  
The University

The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

Ion Implantation and Annealing Effects in Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
High Power ◽  
High Frequency ◽  
Ion Beam ◽  
Surface Erosion ◽  
Annealing Effects ◽  
Ion Ranges ◽  
Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation

2000 ◽  
Vol 622 ◽  
Author(s):  
Jörg K.N. Lindner ◽  
Stephanie Wenzel ◽  
Bernd Stritzker
Keyword(s):  
Surface Layer ◽  
Solid State ◽  
Ion Implantation ◽  
Silicon Substrate ◽  
Ion Beam ◽  
Electrical Contact ◽  
Titanium Silicide ◽  
Solid State Reactions ◽  
High Dose ◽  
Homogeneous Surface

ABSTRACTHigh-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.

Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing

2012 ◽  
Vol 100 (24) ◽  
pp. 242412 ◽  
Author(s):  
C. H. Chen ◽  
H. Niu ◽  
D. C. Yan ◽  
H. H. Hsieh ◽  
C. P. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Ion Beam ◽  
Epitaxial Crystallization

Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Ion-Beam Induced Epitaxial Crystallization of NiSi2 And CoSi2

1989 ◽  
Vol 157 ◽  
Author(s):  
M.C. Ridgway ◽  
R.G. Elliman ◽  
J.S. Williams
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Activation Energies ◽  
Layer By Layer ◽  
Surface Layers ◽  
Epitaxial Crystallization ◽  
Si Substrates ◽  
Amorphous Surface

ABSTRACTIon—beam induced epitaxial crystallization (IBIEC) of amorphous N1Si2 and CoSi2 layers is demonstrated. Epitaxial metal suicide layers on (111) Si substrates were implanted with 40 keV Si ions to form amorphous surface layers. IBIEC of amorphous NiSi2 and CoSi2 layers was induced at 13—74°C with 1.5 MeV Ne ion irradiation and proceeded in a layer—by—layer manner from the original amorphous/crystalline interface with activation energies of 0.26 ± 0.07 and 0.21 ± 0.06 eV for N1Si2 and CoSi2, respectively.

Ion Beam Induced Amorphization and Crystallization Processes in Silicon and GaAs

1986 ◽  
Vol 74 ◽  
Author(s):  
R. G. Elliman ◽  
J. S. Williams ◽  
S. T. Johnson ◽  
E. Nygren
Keyword(s):  
Crystal Growth ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Poor Quality ◽  
Layer By Layer ◽  
Epitaxial Crystallization ◽  
Non Linear ◽  
Thickness Layer

AbstractThin amorphous layers in crystalline Si and GaAs substates have been irradiated at selected temperatures with 1.5 MeV Ne+ ions to induce either epitaxial crystallization or amorphization. In Si, such irradiation can induce complete epitaxial crystallization of a 1000 A surface amorphous layer for temperatures typically >200°C whereas, at significantly lower temperatures, layer-by-layer amorphization results. Although epitaxial crystallization can also be stimulated in GaAs by ion irradiation at temperatures >65°C, the process is non-linear with ion dose and results in poor quality crystal growth for amorphous layers greater than a few hundred Angstroms in thickness. Layer-by-layer amorphization has not been observed in GaAs.

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