Accumulation mode field-effect transistors for improved sensitivity in nanowire-based biosensors

David J. Baek; Juan P. Duarte; Dong-Il Moon; Chang-Hoon Kim; Jae-Hyuk Ahn; Yang-Kyu Choi

doi:10.1063/1.4723843

Accumulation mode field-effect transistors for improved sensitivity in nanowire-based biosensors

Applied Physics Letters ◽

10.1063/1.4723843 ◽

2012 ◽

Vol 100 (21) ◽

pp. 213703 ◽

Cited By ~ 15

Author(s):

David J. Baek ◽

Juan P. Duarte ◽

Dong-Il Moon ◽

Chang-Hoon Kim ◽

Jae-Hyuk Ahn ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Accumulation Mode ◽

Mode Field

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Indium phosphide accumulation-mode field-effect transistors

IEEE Electron Device Letters ◽

10.1109/edl.1983.25666 ◽

1983 ◽

Vol 4 (4) ◽

pp. 108-110 ◽

Cited By ~ 6

Author(s):

H.H. Wieder

Keyword(s):

Indium Phosphide ◽

Field Effect ◽

Field Effect Transistors ◽

Accumulation Mode ◽

Mode Field

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Insulated gate depletion mode and accumulation mode field effect transistors on InP fabricated by electron beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582930 ◽

1984 ◽

Vol 2 (2) ◽

pp. 123

Author(s):

Richard Scheps

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Accumulation Mode ◽

Mode Field

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Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Advanced Functional Materials ◽

10.1002/adfm.202104539 ◽

2021 ◽

pp. 2104539

Author(s):

Yanxia Lin ◽

Shibo Liang ◽

Lin Xu ◽

Lijun Liu ◽

Qianlan Hu ◽

...

Keyword(s):

Carbon Nanotube ◽

Integrated Circuits ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Mode Field ◽

Nanotube Films

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Bioelectronic Recordings of Cardiomyocytes with Accumulation Mode Electrolyte Gated Organic Field Effect Transistors

Biosensors and Bioelectronics ◽

10.1016/j.bios.2019.111844 ◽

2020 ◽

Vol 150 ◽

pp. 111844 ◽

Cited By ~ 2

Author(s):

Adrica Kyndiah ◽

Francesca Leonardi ◽

Carolina Tarantino ◽

Tobias Cramer ◽

Ruben Millan-Solsona ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Accumulation Mode

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A new trench gate accumulation mode field effect emitter switched thyristor

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 ◽

10.1109/ispsd.1995.515032 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.S. Shekar ◽

J. Korec ◽

B.J. Baliga

Keyword(s):

Field Effect ◽

Accumulation Mode ◽

Mode Field

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Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab0de2 ◽

2019 ◽

Vol 52 (22) ◽

pp. 225102

Author(s):

Zhuodong Li ◽

You Meng ◽

Chao Wang ◽

Youchao Cui ◽

Zhao Yao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Mode Field

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A relationship between interface trap density and transconductance in depletion-mode field effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)00261-d ◽

1995 ◽

Vol 38 (7) ◽

pp. 1395-1400 ◽

Cited By ~ 5

Author(s):

Massood Tabib-Azar

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Mode Field

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GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors

Nanotechnology ◽

10.1088/1361-6528/abfb99 ◽

2021 ◽

Author(s):

Jaya Jha ◽

Swaroop Ganguly ◽

Dipankar Saha

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Logic Gate ◽

Enhancement Mode ◽

Mode Field

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A New Voltage Transient Technique for Deep‐Level Studies in Depletion‐Mode Field‐Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838795 ◽

1998 ◽

Vol 145 (9) ◽

pp. 3258-3264 ◽

Cited By ~ 9

Author(s):

P. Kolev ◽

M. H. Deen ◽

T. Hardy ◽

R. Murowinski

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Transient Technique ◽

Mode Field ◽

Voltage Transient

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Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2668 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2668-2671 ◽

Cited By ~ 6

Author(s):

Rihito Kuroda ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Accumulation Mode

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