A New Voltage Transient Technique for Deep‐Level Studies in Depletion‐Mode Field‐Effect Transistors

P. Kolev; M. H. Deen; T. Hardy; R. Murowinski

doi:10.1149/1.1838795

A New Voltage Transient Technique for Deep‐Level Studies in Depletion‐Mode Field‐Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838795 ◽

1998 ◽

Vol 145 (9) ◽

pp. 3258-3264 ◽

Cited By ~ 9

Author(s):

P. Kolev ◽

M. H. Deen ◽

T. Hardy ◽

R. Murowinski

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Transient Technique ◽

Mode Field ◽

Voltage Transient

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Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Advanced Functional Materials ◽

10.1002/adfm.202104539 ◽

2021 ◽

pp. 2104539

Author(s):

Yanxia Lin ◽

Shibo Liang ◽

Lin Xu ◽

Lijun Liu ◽

Qianlan Hu ◽

...

Keyword(s):

Carbon Nanotube ◽

Integrated Circuits ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Mode Field ◽

Nanotube Films

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Indium phosphide accumulation-mode field-effect transistors

IEEE Electron Device Letters ◽

10.1109/edl.1983.25666 ◽

1983 ◽

Vol 4 (4) ◽

pp. 108-110 ◽

Cited By ~ 6

Author(s):

H.H. Wieder

Keyword(s):

Indium Phosphide ◽

Field Effect ◽

Field Effect Transistors ◽

Accumulation Mode ◽

Mode Field

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Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination

Silicon Carbide and Related Materials 2005 - Materials Science Forum ◽

10.4028/0-87849-425-1.1011 ◽

2006 ◽

pp. 1011-1014

Author(s):

Morgan S. Dautrich ◽

Patrick M. Lenahan ◽

Aivars J. Lelis

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Enhancement-mode field-effect transistors based on Ti-doped In2O3 nanowires fabricated by electrospinning

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab0de2 ◽

2019 ◽

Vol 52 (22) ◽

pp. 225102

Author(s):

Zhuodong Li ◽

You Meng ◽

Chao Wang ◽

Youchao Cui ◽

Zhao Yao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Enhancement Mode ◽

Mode Field

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Capacitance and conductance deep level transient spectroscopy in field‐effect transistors

Applied Physics Letters ◽

10.1063/1.96565 ◽

1986 ◽

Vol 48 (3) ◽

pp. 227-229 ◽

Cited By ~ 37

Author(s):

I. D. Hawkins ◽

A. R. Peaker

Keyword(s):

Deep Level Transient Spectroscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Transient Spectroscopy

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Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-induced current spectroscopy (PICS)

Proceedings of the 7th Conference on Semi-insulating III-V Materials, ◽

10.1109/sim.1992.752721 ◽

2005 ◽

Author(s):

R. Sung ◽

M.B. Das

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Induced Current ◽

Inp Substrate

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A relationship between interface trap density and transconductance in depletion-mode field effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)00261-d ◽

1995 ◽

Vol 38 (7) ◽

pp. 1395-1400 ◽

Cited By ~ 5

Author(s):

Massood Tabib-Azar

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Mode Field

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Accumulation mode field-effect transistors for improved sensitivity in nanowire-based biosensors

Applied Physics Letters ◽

10.1063/1.4723843 ◽

2012 ◽

Vol 100 (21) ◽

pp. 213703 ◽

Cited By ~ 15

Author(s):

David J. Baek ◽

Juan P. Duarte ◽

Dong-Il Moon ◽

Chang-Hoon Kim ◽

Jae-Hyuk Ahn ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Accumulation Mode ◽

Mode Field

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Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1611629 ◽

2003 ◽

Vol 94 (8) ◽

pp. 5297 ◽

Cited By ~ 14

Author(s):

A. Cavallini ◽

G. Verzellesi ◽

A. F. Basile ◽

C. Canali ◽

A. Castaldini ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Heterostructure Field Effect Transistors ◽

Transient Spectroscopy

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Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Materials Science Forum - Silicon Carbide and Related Materials 2004 ◽

10.4028/0-87849-963-6.593 ◽

2005 ◽

pp. 593-596

Author(s):

David J. Meyer ◽

Morgen S. Dautrich ◽

Patrick M. Lenahan ◽

Aivars J. Lelis

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Level ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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