scholarly journals Photoemission yield and the electron escape depth determination in metal–oxide–semiconductor structures on N+-type and P+-type silicon substrates

2012 ◽  
Vol 111 (11) ◽  
pp. 114510 ◽  
Author(s):  
H. M. Przewlocki ◽  
D. Brzezinska ◽  
O. Engstrom
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Escape Depth ◽  
Semiconductor Structures ◽  
Type Silicon ◽  
Depth Determination ◽  
Electron Escape ◽  
P Type

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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