Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications

2004 ◽  
Vol 84 (25) ◽  
pp. 5079-5081 ◽  
Author(s):  
M. Kanoun ◽  
A. Souifi ◽  
T. Baron ◽  
F. Mazen
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Memory Applications ◽  
P Type ◽  
Electrical Study

Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals

2007 ◽  
Vol 7 (1) ◽  
pp. 339-343 ◽  
Author(s):  
P. H. Yeh ◽  
L. J. Chen ◽  
P. T. Liu ◽  
D. Y. Wang ◽  
T. C. Chang
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Semiconductor Industry ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Retention Characteristic ◽  
Capacitance Voltage ◽  
Nonvolatile Memory Devices ◽  
Voltage Hysteresis

Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance–voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
Sign in / Sign up

Export Citation Format

Share Document