Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors

Youn Sung Choi; Toshikazu Nishida; Scott E. Thompson

doi:10.1063/1.2917717

Impact of mechanical stress on direct and trap-assisted gate leakage currents in p-type silicon metal-oxide-semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.2917717 ◽

2008 ◽

Vol 92 (17) ◽

pp. 173507 ◽

Cited By ~ 24

Author(s):

Youn Sung Choi ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Leakage Currents ◽

Type Silicon ◽

P Type

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Potential Superiority of p-Type Silicon-Based Metal–Oxide–Semiconductor Structures Over n-Type for Lateral Photovoltaic Effects

IEEE Electron Device Letters ◽

10.1109/led.2016.2577700 ◽

2016 ◽

Vol 37 (8) ◽

pp. 1018-1021 ◽

Cited By ~ 11

Author(s):

Xu Huang ◽

Chunlian Mei ◽

Jieqiong Hu ◽

Diyuan Zheng ◽

Zhikai Gan ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Type Silicon ◽

Photovoltaic Effects ◽

P Type ◽

Silicon Based

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Photoemission yield and the electron escape depth determination in metal–oxide–semiconductor structures on N+-type and P+-type silicon substrates

Journal of Applied Physics ◽

10.1063/1.4722275 ◽

2012 ◽

Vol 111 (11) ◽

pp. 114510 ◽

Cited By ~ 4

Author(s):

H. M. Przewlocki ◽

D. Brzezinska ◽

O. Engstrom

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

Escape Depth ◽

Semiconductor Structures ◽

Type Silicon ◽

Depth Determination ◽

Electron Escape ◽

P Type

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Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal–oxide–semiconductor technology

Nanotechnology ◽

10.1088/0957-4484/23/40/405707 ◽

2012 ◽

Vol 23 (40) ◽

pp. 405707 ◽

Cited By ~ 12

Author(s):

Younghoon Hyun ◽

Youngsam Park ◽

Wonchul Choi ◽

Jaehyeon Kim ◽

Taehyoung Zyung ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Nanowires ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Seebeck Coefficients ◽

Type Silicon ◽

P Type

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Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

Journal of Applied Physics ◽

10.1063/1.2838234 ◽

2008 ◽

Vol 103 (6) ◽

pp. 064510 ◽

Cited By ~ 22

Author(s):

Youn Sung Choi ◽

Toshinori Numata ◽

Toshikazu Nishida ◽

Rusty Harris ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Work Function ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

P Type ◽

Gate Work Function

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Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Journal of The Electrochemical Society ◽

10.1149/1.3363736 ◽

2010 ◽

Vol 157 (6) ◽

pp. H633 ◽

Cited By ~ 13

Author(s):

M. Kolahdouz ◽

P. Tabib Zadeh Adibi ◽

A. Afshar Farniya ◽

S. Shayestehaminzadeh ◽

E. Trybom ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Selective Growth ◽

Oxide Semiconductor ◽

P Type

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Simultaneous scheduling and binding for low gate leakage nano-complementary metal-oxide-semiconductor data path circuit behavioural synthesis

IET Computers & Digital Techniques ◽

10.1049/iet-cdt:20070108 ◽

2008 ◽

Vol 2 (2) ◽

pp. 118 ◽

Cited By ~ 11

Author(s):

S.P. Mohanty ◽

E. Kougianos ◽

D.K. Pradhan

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Data Path ◽

Gate Leakage ◽

Simultaneous Scheduling

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Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Cited By ~ 2

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

Soft Breakdown

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Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c036 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C036 ◽

Cited By ~ 5

Author(s):

San-Lein Wu ◽

Chung Yi Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shin-Hsin Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Flicker Noise ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Strained Sige

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Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.021206 ◽

2009 ◽

Vol 48 (2) ◽

pp. 021206 ◽

Cited By ~ 1

Author(s):

Eiji Morifuji

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Carrier Lifetime ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Time Dependent Dielectric Breakdown

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Cited By ~ 1

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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