Point defects in As-grown and ion implanted GaAs probed by a monoenergetic positron beam

1994 ◽  
Author(s):  
A. Uedono ◽  
S. Fujii ◽  
L. Wei ◽  
S. Tanigawa
Keyword(s):  
Point Defects ◽  
Positron Beam ◽  
Ion Implanted

Creation and Annealing out Mechanism of Defects in Ion-Implanted Si Crystals Investigated by Positron Annihilation

1997 ◽  
Vol 470 ◽  
Author(s):  
S. Tanigawa
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Point Defects ◽  
General Feature ◽  
Positron Beam ◽  
Point Of View ◽  
Ion Energy ◽  
Energy Variable ◽  
Ion Species ◽  
Ion Implanted

ABATRACTVacancy-type defects in Si crystals introduced by ion implantation have been investigated by an energy-variable positron beam The present paper describes the general feature of point defects induced by ion implantation from the point of view of their dependence on implanted ion species, ion dose, ion energy, implanted targets, thermal after implantation, the presence of oxide overlayers and so on.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam

1991 ◽  
Vol 30 (Part 1, No. 2) ◽  
pp. 201-206 ◽  
Author(s):  
Akira Uedono ◽  
Long Wei ◽  
Chisei Dosho ◽  
Hitoshi Kondo ◽  
Shoichiro Tanigawa ◽  
...  
Keyword(s):  
Positron Beam ◽  
Defect Production ◽  
Variable Energy ◽  
Ion Implanted

Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam

2013 ◽  
Vol 113 (12) ◽  
pp. 123502 ◽  
Author(s):  
A. Uedono ◽  
T. Tsutsui ◽  
T. Watanabe ◽  
S. Kimura ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Point Defects ◽  
Positron Beam

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

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