Effect of spatial defect distribution on the electrical behavior of prominent vacancy point defects in swift-ion implanted Si

2009 ◽  
Vol 79 (7) ◽  
Author(s):  
L. Vines ◽  
E. V. Monakhov ◽  
J. Jensen ◽  
A. Yu. Kuznetsov ◽  
B. G. Svensson
Keyword(s):  
Point Defects ◽  
Electrical Behavior ◽  
Defect Distribution ◽  
Ion Implanted

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters

2004 ◽  
Vol 69 (16) ◽  
Author(s):  
Giorgio Lulli ◽  
Eros Albertazzi ◽  
Marco Bianconi ◽  
Alessandra Satta ◽  
Simone Balboni ◽  
...  
Keyword(s):  
Point Defects ◽  
Ion Channeling ◽  
Ion Implanted

scholarly journals Weyl geometry and the nonlinear mechanics of distributed point defects

2012 ◽  
Vol 468 (2148) ◽  
pp. 3902-3922 ◽  
Author(s):  
Arash Yavari ◽  
Alain Goriely
Keyword(s):  
Residual Stress ◽  
Stress Field ◽  
Point Defect ◽  
Point Defects ◽  
Spherical Inclusion ◽  
The Body ◽  
Inclusion Problem ◽  
Spherically Symmetric ◽  
Residual Stress Field ◽  
Defect Distribution

The residual stress field of a nonlinear elastic solid with a spherically symmetric distribution of point defects is obtained explicitly using methods from differential geometry. The material manifold of a solid with distributed point defects—where the body is stress-free—is a flat Weyl manifold, i.e. a manifold with an affine connection that has non-metricity with vanishing traceless part, but both its torsion and curvature tensors vanish. Given a spherically symmetric point defect distribution, we construct its Weyl material manifold using the method of Cartan's moving frames. Having the material manifold, the anelasticity problem is transformed to a nonlinear elasticity problem and reduces the problem of computing the residual stresses to finding an embedding into the Euclidean ambient space. In the case of incompressible neo-Hookean solids, we calculate explicitly this residual stress field. We consider the example of a finite ball and a point defect distribution uniform in a smaller ball and vanishing elsewhere. We show that the residual stress field inside the smaller ball is uniform and hydrostatic. We also prove a nonlinear analogue of Eshelby's celebrated inclusion problem for a spherical inclusion in an isotropic incompressible nonlinear solid.

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