Thermal electron attachment to NO. I. The mechanism and the three‐body rate constants

1988 ◽  
Vol 89 (5) ◽  
pp. 2938-2942 ◽  
Author(s):  
H. Shimamori ◽  
H. Hotta
2009 ◽  
Vol 80 (3) ◽  
pp. 034104 ◽  
Author(s):  
Thomas M. Miller ◽  
Jeffrey F. Friedman ◽  
John S. Williamson ◽  
Linda C. Schaffer ◽  
A. A. Viggiano

1988 ◽  
Vol 41 (9) ◽  
pp. 1491 ◽  
Author(s):  
J Sherwell ◽  
R Cooper ◽  
DC Nguyen ◽  
SP Mezyk

A new technique involving a combination of microwave absorption techniques and pulse radiolysis has been used to monitor electron processes in irradiated gases. The thermal electron attachment rate constants of various halogen-containing molecules have been measured and compared with the available literature values. The adaption of this technique for the measurement of electron-ion recombination rate constants and thermalization times for these gases is discussed.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-103-C7-104
Author(s):  
A. N. Vasilieva ◽  
I. A. Grishina ◽  
V. I. Ktitorov ◽  
A. S. Kovalev ◽  
A. T. Rakhimov

2013 ◽  
Vol 103 (3) ◽  
pp. 034106 ◽  
Author(s):  
A. V. Shutov ◽  
I. V. Smetanin ◽  
A. A. Ionin ◽  
A. O. Levchenko ◽  
L. V. Seleznev ◽  
...  

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