Electron attachment rate constants of SO2and CS2in Ar, N2, and CH4at variedE/N

1986 ◽  
Vol 84 (5) ◽  
pp. 2675-2681 ◽  
Author(s):  
W. C. Wang ◽  
L. C. Lee
2009 ◽  
Vol 80 (3) ◽  
pp. 034104 ◽  
Author(s):  
Thomas M. Miller ◽  
Jeffrey F. Friedman ◽  
John S. Williamson ◽  
Linda C. Schaffer ◽  
A. A. Viggiano

1986 ◽  
Vol 85 (11) ◽  
pp. 6470-6474 ◽  
Author(s):  
W. C. Wang ◽  
L. C. Lee

1988 ◽  
Vol 41 (9) ◽  
pp. 1491 ◽  
Author(s):  
J Sherwell ◽  
R Cooper ◽  
DC Nguyen ◽  
SP Mezyk

A new technique involving a combination of microwave absorption techniques and pulse radiolysis has been used to monitor electron processes in irradiated gases. The thermal electron attachment rate constants of various halogen-containing molecules have been measured and compared with the available literature values. The adaption of this technique for the measurement of electron-ion recombination rate constants and thermalization times for these gases is discussed.


2009 ◽  
Vol 131 (8) ◽  
pp. 084302 ◽  
Author(s):  
Thomas M. Miller ◽  
Jeffrey F. Friedman ◽  
Linda C. Schaffer ◽  
A. A. Viggiano

1979 ◽  
Vol 34 (3) ◽  
pp. 187-189 ◽  
Author(s):  
M. Rokni ◽  
J. H. Jacob ◽  
J. A. Mangano

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