Laser ablation for the metal-oxide thin-film deposition: Mechanisms and applications

1993 ◽  
Author(s):  
Tomoji Kawai
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Metal Oxide ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Technology of metal oxide thin film deposition with interruptions

2007 ◽  
Vol 202 (3) ◽  
pp. 453-459 ◽  
Author(s):  
V. Khatko ◽  
J. Calderer ◽  
S. Vallejos ◽  
E. Llobet ◽  
X. Correig
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

scholarly journals Editorial for the Special Issue on ‘Metal Oxide Thin Film: Synthesis, Characterization, and Application’

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1834
Author(s):  
Erwan Rauwel ◽  
Protima Rauwel
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
New Technologies ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Special Issue ◽  
Metal Oxide Thin Film ◽  
Film Synthesis

The last two decades have witnessed the development of new technologies for thin-film deposition and coating [...]

scholarly journals Cobalt and manganese carboxylates for metal oxide thin film deposition by applying the atmospheric pressure combustion chemical vapour deposition process

RSC Advances ◽  
2018 ◽  
Vol 8 (28) ◽  
pp. 15632-15640 ◽  
Author(s):  
B. S. M. Kretzschmar ◽  
K. Assim ◽  
A. Preuß ◽  
A. Heft ◽  
M. Korb ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Complexes [M(O2CCH2OC2H4OMe)2] (M = Co, Mn) were synthesized characterised regarding their thermal behaviour. They were used as precursors for deposition of rough Co3O4and smooth Mn2O3/Mn3O4thin filmsviathe CCVD process.

Solution-processed metal oxide arrays using femtosecond laser ablation and annealing for thin-film transistors

2017 ◽  
Vol 5 (36) ◽  
pp. 9273-9280 ◽  
Author(s):  
Cihai Chen ◽  
Gengxu Chen ◽  
Huihuang Yang ◽  
Guocheng Zhang ◽  
Daobin Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Femtosecond Laser ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Femtosecond Laser Ablation ◽  
Oxide Thin Film ◽  
Metal Oxide Layer ◽  
Metal Oxide Thin Film

A femtosecond laser is proposed to pattern and anneal a metal oxide layer for simple fabrication of metal oxide thin-film transistor arrays.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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