High-boron p-type silicon germanium thermoelectric material prepared by the vacuum casting and hot pressing method

1993 ◽  
Author(s):  
Stephen Loughin ◽  
Dominick X. Centurioni ◽  
Arch G. Robison ◽  
John J. Maley ◽  
Jean-Pierre Fleurial
Keyword(s):  
Thermoelectric Material ◽  
Silicon Germanium ◽  
Hot Pressing ◽  
Pressing Method ◽  
Vacuum Casting ◽  
Type Silicon ◽  
High Boron ◽  
P Type

Thermoelectric Properties on SixGe1-x Containing Fullerite

2007 ◽  
Vol 280-283 ◽  
pp. 409-412 ◽  
Author(s):  
Gui Ying Xu ◽  
Xiao Feng Wu ◽  
Li Li Zhang ◽  
Chang Chun Ge
Keyword(s):  
Quantum Dot ◽  
Thermoelectric Property ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Analytical Method ◽  
Hot Pressing ◽  
Thermoelectric Generator ◽  
Pressing Method ◽  
Higher Temperature ◽  
P Type

SixGe1-x (x = 0.75 for n-type and 0.7 for p-type) is a typical thermoelectric material used at higher temperature as thermoelectric generator. Its property is dependent on the composition. SixGe1-x containing different amount of fullerite added as hollow quantum dot were fabricated by hot-pressing method. The relations among thermoelectric property, the amount of fullerite and the microstructure were investigated by normal measurement and analytical method.

The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee
Keyword(s):  
Transport Properties ◽  
Silicon Germanium ◽  
Type Silicon ◽  
Synthesis Parameters ◽  
Germanium Alloy ◽  
P Type

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

57Fe Mössbauer investigations in p-type Silicon Germanium single crystals

2008 ◽  
Vol 188 (1-3) ◽  
pp. 11-17 ◽  
Author(s):  
D. Naidoo ◽  
H. P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
V. V. Naicker ◽  
G. Weyer ◽  
...  
Keyword(s):  
Single Crystals ◽  
Silicon Germanium ◽  
57Fe Mössbauer ◽  
Type Silicon ◽  
P Type

Electrical properties of lightly doped p-type silicon–germanium single crystals

1998 ◽  
Vol 83 (10) ◽  
pp. 5258-5263 ◽  
Author(s):  
P. Gaworzewski ◽  
K. Tittelbach-Helmrich ◽  
U. Penner ◽  
N. V. Abrosimov
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Silicon Germanium ◽  
Type Silicon ◽  
P Type

Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4670-4674 ◽  
Author(s):  
Giri Joshi ◽  
Hohyun Lee ◽  
Yucheng Lan ◽  
Xiaowei Wang ◽  
Gaohua Zhu ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Type Silicon ◽  
P Type ◽  
Bulk Alloys

Thermoelectric properties of p-type (Bi,Sb)2Te3 alloys fabricated by the hot pressing method

1998 ◽  
Vol 4 (1) ◽  
pp. 75-81 ◽  
Author(s):  
Hee-Jeong Kim ◽  
Hang-Chong Kim ◽  
Dow-Bin Hyun ◽  
Tae-Sung Oh
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Pressing Method ◽  
P Type
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