Electrical properties of lightly doped p-type silicon–germanium single crystals

1998 ◽  
Vol 83 (10) ◽  
pp. 5258-5263 ◽  
Author(s):  
P. Gaworzewski ◽  
K. Tittelbach-Helmrich ◽  
U. Penner ◽  
N. V. Abrosimov
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Silicon Germanium ◽  
Type Silicon ◽  
P Type

57Fe Mössbauer investigations in p-type Silicon Germanium single crystals

2008 ◽  
Vol 188 (1-3) ◽  
pp. 11-17 ◽  
Author(s):  
D. Naidoo ◽  
H. P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
V. V. Naicker ◽  
G. Weyer ◽  
...  
Keyword(s):  
Single Crystals ◽  
Silicon Germanium ◽  
57Fe Mössbauer ◽  
Type Silicon ◽  
P Type

57Fe Mössbauer investigations in p-type Silicon Germanium single crystals

ICAME 2007 ◽  
2008 ◽  
pp. 1245-1251
Author(s):  
D. Naidoo ◽  
◽  
H. P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
V. V. Naicker ◽  
...  
Keyword(s):  
Single Crystals ◽  
Silicon Germanium ◽  
57Fe Mössbauer ◽  
Type Silicon ◽  
P Type

Electrical Properties of CdCr2Se4. I. p-Type Ag-Doped Single Crystals

1980 ◽  
Vol 19 (2) ◽  
pp. 307-315 ◽  
Author(s):  
Kunihiko Kodama ◽  
Tatsuya Niimi
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
P Type

The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee
Keyword(s):  
Transport Properties ◽  
Silicon Germanium ◽  
Type Silicon ◽  
Synthesis Parameters ◽  
Germanium Alloy ◽  
P Type

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

2008 ◽  
Vol 34 (3) ◽  
pp. 241-243 ◽  
Author(s):  
N. N. Zaveryukhina ◽  
E. B. Zaveryukhina ◽  
S. I. Vlasov ◽  
B. N. Zaveryukhin
Keyword(s):  
Energy Spectrum ◽  
Single Crystals ◽  
Surface States ◽  
Type Silicon ◽  
P Type

Electrical properties of p-type CuInSe2 single crystals

1979 ◽  
Vol 56 (2) ◽  
pp. K137-K140 ◽  
Author(s):  
H. Neumann ◽  
R. D. Tomlinson ◽  
E. Nowak ◽  
N. Avgerinos
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
P Type
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