Effect of heavy boron doping on the lattice strain around platelet oxide precipitates in Czochralski silicon wafers

2000 ◽  
Vol 88 (1) ◽  
pp. 503-507 ◽  
Author(s):  
Mitsuharu Yonemura ◽  
Koji Sueoka ◽  
Kazuhito Kamei
Keyword(s):  
Lattice Strain ◽  
Boron Doping ◽  
Silicon Wafers ◽  
Czochralski Silicon

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Gettering of surface and bulk impurities in Czochralski silicon wafers

1978 ◽  
Vol 32 (11) ◽  
pp. 747-749 ◽  
Author(s):  
G. A. Rozgonyi ◽  
C. W. Pearce
Keyword(s):  
Silicon Wafers ◽  
Czochralski Silicon

scholarly journals Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045301 ◽  
Author(s):  
Kang Yuan ◽  
Yuxin Sun ◽  
Yunhao Lu ◽  
Xingbo Liang ◽  
Daxi Tian ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Silicon Wafers ◽  
Czochralski Silicon

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

1995 ◽  
Vol 142 (9) ◽  
pp. 3189-3192 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Czochralski Silicon

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

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