Investigation on the diffusion barrier properties of sputtered Mo∕W–N thin films in Cu interconnects

2007 ◽  
Vol 91 (16) ◽  
pp. 162108 ◽  
Author(s):  
Prodyut Majumder ◽  
Christos G. Takoudis
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
Cu Interconnects

Investigation of oxygen diffusion barrier properties of reactively sputtered iro2 thin films

2001 ◽  
Vol 37 (1-4) ◽  
pp. 29-38 ◽  
Author(s):  
Cay Uwe Pinnow ◽  
Igor Kasko ◽  
Nicolas Nagel ◽  
Christine Dehm ◽  
Franz Jahnel ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
Barrier Properties

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

2010 ◽  
Vol 1249 ◽  
Author(s):  
Stacey Bent ◽  
Paul William Loscutoff ◽  
Scott Clendenning
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Organic Thin Films ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Molecular Layer Deposition ◽  
Copper Diffusion ◽  
Barrier Layers ◽  
Layer Deposition

AbstractDevice scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures

2012 ◽  
Vol 60 (10) ◽  
pp. 1521-1525
Author(s):  
Sang In Song ◽  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Hong Kee Lee
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology

2004 ◽  
Vol 449-452 ◽  
pp. 457-460
Author(s):  
Nam Ihn Cho ◽  
Min Chul Kim ◽  
Kyung Hwa Rim ◽  
Ho Jung Chang ◽  
Keeyoung Jun ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
High Vacuum ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Nitride Layer ◽  
Layer Growth ◽  
Flow Modulation

Copper (Cu) thin films have been deposited onto titanium nitride (TiN) layer which was previously prepared by flow modulation chemical vapor deposition (FMCVD technology. The diffusion barrier properties of the TiN layer to Cu have been studied depending upon the post-annealing and the sample preparation conditions of the TiN layer. The Cu deposition has performed by RF magnetron sputtering with 5N target in the high vacuum ambient. The FMCVD process has carried out in a single CVD chamber by switching TiCl4flow to the argon flow cyclically, which creates sequential deposition of TiN layer and chlorine reduction process. The higher flow modulation cycle and Ar purge time during the TiN layer growth have been observed to provide the better diffusion barrier property in Auger depth profile and X-ray diffraction analysis.

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