Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

2011 ◽  
Vol 11 (1) ◽  
pp. 671-674 ◽  
Author(s):  
Seong-Jun Jeong ◽  
Doo-In Kim ◽  
Sang Ouk Kim ◽  
Tae Hee Han ◽  
Jung-Dae Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Layer Deposition

The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Kim ◽  
C. Cabral ◽  
C. Lavoie ◽  
S.M. Rossnagel
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Atomic Layer Deposition of Titanium Nitride Thin Films Using tert-Butylamine and Allylamine as Reductive Nitrogen Sources

2002 ◽  
Vol 5 (1) ◽  
pp. C4 ◽  
Author(s):  
Marika Juppo ◽  
Petra Alén ◽  
Mikko Ritala ◽  
Timo Sajavaara ◽  
Juhani Keinonen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Tert Butylamine

Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition

2017 ◽  
Vol 30 (9) ◽  
pp. 095010 ◽  
Author(s):  
Y T Yemane ◽  
M J Sowa ◽  
J Zhang ◽  
L Ju ◽  
E W Deguns ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Niobium Titanium

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

2014 ◽  
Vol 562 ◽  
pp. 331-337 ◽  
Author(s):  
Mika Vähä-Nissi ◽  
Marja Pitkänen ◽  
Erkki Salo ◽  
Eija Kenttä ◽  
Anne Tanskanen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Polymer Films ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Zno Thin Films ◽  
Oriented Polymer ◽  
Layer Deposition
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