Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport

2000 ◽  
Vol 87 (9) ◽  
pp. 4626-4628 ◽  
Author(s):  
P. Riess ◽  
G. Ghibaudo ◽  
G. Pananakakis
Keyword(s):  
Leakage Current ◽  
Hole Injection ◽  
Dispersive Transport ◽  
Current Generation ◽  
Anode Hole ◽  
Stress Induced Leakage Current ◽  
Anode Hole Injection

scholarly journals An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs

2018 ◽  
Vol 6 ◽  
pp. 803-807
Author(s):  
Jih-Chien Liao ◽  
Yu-Hsuan Chen ◽  
Chen-Hsin Lien ◽  
Osbert Cheng ◽  
Cheng-Tung Huang ◽  
...  
Keyword(s):  
Hole Injection ◽  
Anode Hole ◽  
Anode Hole Injection

Modeling of time dependence of hole current and prediction of QBD and tBD for thin gate MOS devices based upon anode hole injection

2001 ◽  
Vol 45 (10) ◽  
pp. 1773-1785 ◽  
Author(s):  
Mohammed T Quddus ◽  
Thomas A DeMassa ◽  
Dieter K Schroder ◽  
Julian J Sanchez
Keyword(s):  
Time Dependence ◽  
Hole Injection ◽  
Mos Devices ◽  
Anode Hole ◽  
Anode Hole Injection ◽  
Hole Current

Model for the oxide thickness dependence of SILC generation based on anode hole injection process

1999 ◽  
Vol 39 (6-7) ◽  
pp. 791-795 ◽  
Author(s):  
C. Jahan ◽  
S. Bruyère ◽  
G. Ghibaudo ◽  
E. Vincent ◽  
K. Barla
Keyword(s):  
Oxide Thickness ◽  
Thickness Dependence ◽  
Hole Injection ◽  
Injection Process ◽  
Anode Hole ◽  
Anode Hole Injection

MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications

2001 ◽  
Vol 11 (03) ◽  
pp. 849-886 ◽  
Author(s):  
Yee-Chia Yeo ◽  
Qiang Lu ◽  
Chenming Hu
Keyword(s):  
Gate Dielectric ◽  
Theoretical Foundation ◽  
Supply Voltage ◽  
Operating Time ◽  
Hole Injection ◽  
Power Supply Voltage ◽  
Oxide Reliability ◽  
Injection Model ◽  
Anode Hole ◽  
Anode Hole Injection

We review the development of the anode hole injection (AHI) model for reliability projection of the silicon dioxide gate dielectric. The experimental and theoretical foundation of the AHI model is presented. Recent development and implications for the reliability of ultra-thin oxides are discussed. AHI is used to illuminate the questions of E versus 1/E models and field-driven versus voltage-driven models. Building on the concept of effective thinning, the AHI model is applied for the interpretation of defect-induced breakdown data and for optimizing oxide screening conditions. Circuit level reliability projection as a function of operating time, temperature, and power supply voltage is also illustrated.

Stress induced leakage current generated by hot-hole injection

2013 ◽  
Vol 109 ◽  
pp. 298-301 ◽  
Author(s):  
Akinobu Teramoto ◽  
Hyeonwoo Park ◽  
Takuya Inatsuka ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Leakage Current ◽  
Hole Injection ◽  
Stress Induced Leakage Current

Anode hole injection and trapping in silicon dioxide

1996 ◽  
Vol 80 (1) ◽  
pp. 304-317 ◽  
Author(s):  
D. J. DiMaria ◽  
E. Cartier ◽  
D. A. Buchanan
Keyword(s):  
Silicon Dioxide ◽  
Hole Injection ◽  
Anode Hole ◽  
Anode Hole Injection
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