Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition

2000 ◽  
Vol 87 (4) ◽  
pp. 1734-1742 ◽  
Author(s):  
P. Petrik ◽  
T. Lohner ◽  
M. Fried ◽  
L. P. Biró ◽  
N. Q. Khánh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Films ◽  
Pressure Chemical ◽  
Ellipsometric Study ◽  
Polycrystalline Silicon Films

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

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