TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
2002 ◽
Vol 12
(4)
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pp. 69-74
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2017 ◽
Vol 19
(8)
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pp. 1700193
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1999 ◽
Vol 146
(8)
◽
pp. 2901-2905
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