Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

2011 ◽  
Vol 406 (11) ◽  
pp. 2273-2276 ◽  
Author(s):  
C. Nyamhere ◽  
J.R. Botha ◽  
A. Venter
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Electrical Characterization ◽  
Deep Levels

P-8: Hydrogen Plasma Treatment on the Electrical Characterization of Inverted Staggered Pentacene Thin Film Transistors

2003 ◽  
Vol 34 (1) ◽  
pp. 232
Author(s):  
Jae Won Chang ◽  
Hoon Kim ◽  
Jong Moo Kim ◽  
Jai-Kyeong Kim ◽  
Young-Chul Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Electrical Characterization

Optical and Electrical Characterization of Quantum Dot Infrared Photodetector Structure Treated with Hydrogen-Plasma

2005 ◽  
Vol 864 ◽  
Author(s):  
H.D. Nam ◽  
J.D. Song ◽  
W.J. Choi ◽  
J.I. Lee ◽  
H.S. Yang
Keyword(s):  
Quantum Dot ◽  
Plasma Treatment ◽  
Gas Flow ◽  
Wide Spectrum ◽  
Hydrogen Plasma ◽  
Electrical Characterization ◽  
Peak Position ◽  
Infrared Photodetector ◽  
Grown Sample ◽  
Quantum Dot Infrared Photodetector

AbstractWe have carried out hydrogen-plasma (H-plasma) treatments on a quantum dot infrared photodetector (QDIP) structure, with a 5-stacked InAs dots in an InGaAs well structure and a Al0.3Ga0.7As/GaAs superlattice barrier. The sample structures were grown by molecular beam epitaxy. The H-plasma treatment has been carried out at 150 °C for 3 min – 40 min with 40 sccm of H2 gas flow rate and 10 W of RF power. After H-plasma treatment, photoluminescence (PL) intensities of the samples were slightly reduced compared to that of as-grown sample, without any changes in their PL peak position. The dark currents of H-plasma treated samples were much smaller by many orders of magnitudes than that for as-grown sample. The sample exposed to Hplasma for 10 min showed the lowest dark current, enabling the observation of photocurrent with a wide spectrum between 3 – 12 μim at 11 K.

Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring

2010 ◽  
Vol 49 (8) ◽  
pp. 08JD02 ◽  
Author(s):  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Masanaga Fukasawa ◽  
Yoshinori Takao ◽  
Tetsuya Tatsumi ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Hydrogen Plasma ◽  
Electrical Characterization ◽  
Surface Structures

Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

1999 ◽  
Vol 86 (9) ◽  
pp. 4855-4860
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Deep Levels

Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment

2000 ◽  
Author(s):  
Masashi Kato ◽  
Fumitaka Sobue ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Noboru Yamada ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Deep Levels

Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2983-2986 ◽  
Author(s):  
Masashi Kato ◽  
Fumitaka Sobue ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Noboru Yamada ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Deep Levels
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