Nondestructive determination of beryllium outdiffusion in AlGaAs/GaAs heterojunction bipolar transistor structures by low-temperature photoluminescence

Hong Wang; Geok Ing Ng; Haiqun Zheng; Penghua Zhang

doi:10.1063/1.371356

Nondestructive determination of beryllium outdiffusion in AlGaAs/GaAs heterojunction bipolar transistor structures by low-temperature photoluminescence

Journal of Applied Physics ◽

10.1063/1.371356 ◽

1999 ◽

Vol 86 (8) ◽

pp. 4267-4272 ◽

Cited By ~ 1

Author(s):

Hong Wang ◽

Geok Ing Ng ◽

Haiqun Zheng ◽

Penghua Zhang

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Nondestructive Determination ◽

Low Temperature Photoluminescence

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Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunction bipolar transistor structures based on their line-shape analysis

Journal of Applied Physics ◽

10.1063/1.1766416 ◽

2004 ◽

Vol 96 (4) ◽

pp. 1967-1974 ◽

Cited By ~ 9

Author(s):

Hideo Takeuchi ◽

Yoshitsugu Yamamoto ◽

Masaaki Nakayama

Keyword(s):

Shape Analysis ◽

Line Shape ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Nondestructive Determination ◽

Line Shape Analysis

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A Novel Double Base Heterojunction Bipolar Transistor for Low Temperature Bipolar Logic

10.1109/drc.1992.671851 ◽

2005 ◽

Author(s):

E.J. Prinz ◽

Xiadong Xiao ◽

P.V. Schwartz ◽

J.C. Sturm

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Base

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Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals

Physics of the Solid State ◽

10.1134/1.1130632 ◽

1998 ◽

Vol 40 (10) ◽

pp. 1672-1675 ◽

Cited By ~ 3

Author(s):

N. I. Tarbaev

Keyword(s):

Low Temperature ◽

Single Crystals ◽

Dislocation Slip ◽

Slip Systems ◽

Low Temperature Photoluminescence

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A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

IEEE Transactions on Electron Devices ◽

10.1109/16.163484 ◽

1992 ◽

Vol 39 (11) ◽

pp. 2636-2637 ◽

Cited By ~ 1

Author(s):

E.J. Prinz ◽

X. Xiao ◽

P.V. Schwartz ◽

J.C. Sturm

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Base

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Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor

IEEE Electron Device Letters ◽

10.1109/55.192776 ◽

1992 ◽

Vol 13 (8) ◽

pp. 414-417 ◽

Cited By ~ 14

Author(s):

K. Ikossi-Anastasiou ◽

A. Ezis ◽

K.R. Evans ◽

C.E. Stutz

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Narrow Base

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Determination of Nitrogen Doping Concentration in Doped 4H-SiC Epilayers by Low Temperature Photoluminescence

Physica Scripta ◽

10.1238/physica.regular.072a00254 ◽

2005 ◽

Vol 72 (2-3) ◽

pp. 254-257 ◽

Cited By ~ 12

Author(s):

A Henry ◽

U Forsberg ◽

M K Linnarsson ◽

E Janzén

Keyword(s):

Low Temperature ◽

Nitrogen Doping ◽

Doping Concentration ◽

Low Temperature Photoluminescence

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Novel characterization technique for GaAs/GaInP heterojunction bipolar transistor wafers based on Fourier transformed photoreflectance enabling selective determination of interface electric fields

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205433 ◽

2003 ◽

Author(s):

T. Kita ◽

T. Kakutani ◽

O. Wada

Keyword(s):

Electric Fields ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Selective Determination ◽

Characterization Technique

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A high-current-gain low-temperature pseudo-heterojunction bipolar transistor utilizing sidewall base-contact structure (SICOS)

IEEE Transactions on Electron Devices ◽

10.1109/16.75166 ◽

1991 ◽

Vol 38 (3) ◽

pp. 555-565 ◽

Cited By ~ 11

Author(s):

K. Yano ◽

K. Nakazato ◽

M. Miyamoto ◽

T. Onai ◽

M. Aoki ◽

...

Keyword(s):

Low Temperature ◽

Contact Structure ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Base Contact

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Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor

10.1117/12.137715 ◽

1992 ◽

Author(s):

Kiki Ikossi-Anastasiou ◽

Andris Ezis ◽

Keith Evans ◽

Charles E. Stutz

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Current Gain ◽

High Current ◽

Narrow Base

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Erratum: Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals [Phys. solid state 40, No. 10, 1672–1675 (October 1998)]

Physics of the Solid State ◽

10.1134/1.1130776 ◽

1999 ◽

Vol 41 (2) ◽

pp. 328-328

Author(s):

N. I. Tarbaev

Keyword(s):

Solid State ◽

Low Temperature ◽

Single Crystals ◽

Dislocation Slip ◽

Slip Systems ◽

Low Temperature Photoluminescence

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