Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation

E. Cassan; S. Galdin; P. Dollfus; P. Hesto

doi:10.1063/1.371291

Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.371291 ◽

1999 ◽

Vol 86 (7) ◽

pp. 3804-3811 ◽

Cited By ~ 29

Author(s):

E. Cassan ◽

S. Galdin ◽

P. Dollfus ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Direct Tunneling

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A Monte Carlo simulation of damage to the gate oxide of metal‐oxide‐silicon field‐effect transistors from electron beam lithography

Journal of Applied Physics ◽

10.1063/1.342896 ◽

1989 ◽

Vol 65 (5) ◽

pp. 2024-2030 ◽

Cited By ~ 2

Author(s):

K. D. Cummings

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Beam ◽

Metal Oxide ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Silicon

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Monte Carlo Simulation of GaAs–AlxGa1−x as Field-Effect Transistors

Hot Carriers in Semiconductor Nanostructures ◽

10.1016/b978-0-08-092570-7.50013-1 ◽

1992 ◽

pp. 235-275

Author(s):

C. Isik Kizilyalli ◽

Karl Hess

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors

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Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.100207 ◽

2009 ◽

Vol 48 (10) ◽

pp. 100207 ◽

Cited By ~ 2

Author(s):

Toshihiro Kasama ◽

Anri Nakajima

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Site Percolation ◽

Percolation Problem

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Monte Carlo Simulation of Small Silicon Field-Effect Transistors

10.7567/ssdm.1993.c-1-1 ◽

1993 ◽

Author(s):

M. V. Fischetti ◽

S. E. Laux ◽

D. J. Frank

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors

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Organic Field-Effect Transistors: A 3D Kinetic Monte Carlo Simulation of the Current Characteristics in Micrometer-Sized Devices

Advanced Functional Materials ◽

10.1002/adfm.201605715 ◽

2017 ◽

Vol 27 (9) ◽

pp. 1605715 ◽

Cited By ~ 15

Author(s):

Haoyuan Li ◽

Yuan Li ◽

Hong Li ◽

Jean-Luc Brédas

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Kinetic Monte Carlo ◽

Organic Field Effect Transistors ◽

Kinetic Monte Carlo Simulation ◽

Current Characteristics

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Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1379786 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4034-4036 ◽

Cited By ~ 13

Author(s):

Y. T. Hou ◽

M. F. Li ◽

W. H. Lai ◽

Y. Jin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Hole Current

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Monte Carlo simulation of short channel heterostructure field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.75214 ◽

1991 ◽

Vol 38 (4) ◽

pp. 840-851 ◽

Cited By ~ 22

Author(s):

G.U. Jensen ◽

B. Lund ◽

T.A. Fjeldly ◽

M. Shur

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6463 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6463-6470 ◽

Cited By ~ 11

Author(s):

Kenji Natori ◽

Naoya Wada ◽

Takashi Kurusu

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Simulation Technique ◽

Oxide Semiconductor ◽

Monte Carlo Simulation Technique

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Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3496658 ◽

2010 ◽

Vol 108 (8) ◽

pp. 084506 ◽

Cited By ~ 13

Author(s):

Toufik Sadi ◽

Jean-Luc Thobel ◽

François Dessenne

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Self Consistent

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Full band Monte Carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors

14th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2014.6968090 ◽

2014 ◽

Author(s):

R. Hathwar ◽

M. Saraniti ◽

S. M. Goodnick

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Full Band

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