A Monte Carlo simulation of damage to the gate oxide of metal‐oxide‐silicon field‐effect transistors from electron beam lithography

1989 ◽  
Vol 65 (5) ◽  
pp. 2024-2030 ◽  
Author(s):  
K. D. Cummings
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Metal Oxide ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Silicon

Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

2003 ◽  
Vol 42 (Part 1, No. 6B) ◽  
pp. 4142-4146 ◽  
Author(s):  
Yongxun Liu ◽  
Kenichi Ishii ◽  
Toshiyuki Tsutsumi ◽  
Meishoku Masahara ◽  
Hidenori Takashima ◽  
...  
Keyword(s):  
Electron Beam ◽  
Metal Oxide ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (4) ◽  
pp. 044504 ◽  
Author(s):  
Karim Huet ◽  
Damien Querlioz ◽  
Wipa Chaisantikulwat ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monte Carlo Study ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nanometer Scale
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