Monte Carlo simulation of short channel heterostructure field-effect transistors

G.U. Jensen; B. Lund; T.A. Fjeldly; M. Shur

doi:10.1109/16.75214

Monte Carlo simulation of short channel heterostructure field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.75214 ◽

1991 ◽

Vol 38 (4) ◽

pp. 840-851 ◽

Cited By ~ 22

Author(s):

G.U. Jensen ◽

B. Lund ◽

T.A. Fjeldly ◽

M. Shur

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Short-channel transport behavior in scaled 25-nanometer GaAs/AlGaAs heterostructure field effect transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.64.1441 ◽

2014 ◽

Vol 64 (10) ◽

pp. 1441-1445 ◽

Cited By ~ 1

Author(s):

Jaeheon Han

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Transport Behavior ◽

Channel Transport ◽

Heterostructure Field Effect Transistors

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Scaling of gate length in ultra-short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(98)00247-0 ◽

1999 ◽

Vol 43 (2) ◽

pp. 335-341 ◽

Cited By ~ 13

Author(s):

Jaeheon Han ◽

David K. Ferry

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Length ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Monte Carlo Simulation of GaAs–AlxGa1−x as Field-Effect Transistors

Hot Carriers in Semiconductor Nanostructures ◽

10.1016/b978-0-08-092570-7.50013-1 ◽

1992 ◽

pp. 235-275

Author(s):

C. Isik Kizilyalli ◽

Karl Hess

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors

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Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.100207 ◽

2009 ◽

Vol 48 (10) ◽

pp. 100207 ◽

Cited By ~ 2

Author(s):

Toshihiro Kasama ◽

Anri Nakajima

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Site Percolation ◽

Percolation Problem

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Monte Carlo Simulation of Small Silicon Field-Effect Transistors

10.7567/ssdm.1993.c-1-1 ◽

1993 ◽

Author(s):

M. V. Fischetti ◽

S. E. Laux ◽

D. J. Frank

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors

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Organic Field-Effect Transistors: A 3D Kinetic Monte Carlo Simulation of the Current Characteristics in Micrometer-Sized Devices

Advanced Functional Materials ◽

10.1002/adfm.201605715 ◽

2017 ◽

Vol 27 (9) ◽

pp. 1605715 ◽

Cited By ~ 15

Author(s):

Haoyuan Li ◽

Yuan Li ◽

Hong Li ◽

Jean-Luc Brédas

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Kinetic Monte Carlo ◽

Organic Field Effect Transistors ◽

Kinetic Monte Carlo Simulation ◽

Current Characteristics

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Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation

Journal of Applied Physics ◽

10.1063/1.371291 ◽

1999 ◽

Vol 86 (7) ◽

pp. 3804-3811 ◽

Cited By ~ 29

Author(s):

E. Cassan ◽

S. Galdin ◽

P. Dollfus ◽

P. Hesto

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Direct Tunneling

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Short channel effects in submicron self-aligned gate heterostructure field effect transistors

10.1109/iedm.1988.32908 ◽

2003 ◽

Cited By ~ 11

Author(s):

C.J. Han ◽

P.P. Ruden ◽

D. Grider ◽

A. Fraasch ◽

K. Newstrom ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Heterostructure Field Effect Transistors

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