Deep level analysis of radiation-induced defects in Si crystals and solar cells

1999 ◽  
Vol 86 (1) ◽  
pp. 217-223 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Aurangzeb Khan ◽  
Stephen J. Taylor ◽  
Koshi Ando ◽  
Tsutomu Yamaguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level ◽  
Radiation Induced ◽  
Induced Defects ◽  
Level Analysis

Defect analysis of crystalline Si solar cells by learning radiation-induced defects in Si

2021 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Takefumi Kamioka ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita
Keyword(s):  
Solar Cells ◽  
Defect Analysis ◽  
Si Solar Cells ◽  
Radiation Induced ◽  
Induced Defects

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

2001 ◽  
Vol 90 (3) ◽  
pp. 1170-1178 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Y. Ohshita ◽  
N. Dharmarasu ◽  
K. Araki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Production Rates ◽  
Radiation Induced ◽  
Silicon Materials ◽  
Induced Defects

Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu

2007 ◽  
Vol 131-133 ◽  
pp. 363-368 ◽  
Author(s):  
Vladimir P. Markevich ◽  
Anthony R. Peaker ◽  
I.F. Medvedeva ◽  
Vasilii E. Gusakov ◽  
L.I. Murin ◽  
...  
Keyword(s):  
Energy Level ◽  
Deep Level ◽  
Stable Configuration ◽  
Annealing Behaviour ◽  
Chemical Modelling ◽  
Radiation Induced ◽  
Defect Reactions ◽  
Annealing Study ◽  
Transient Spectroscopy ◽  
Induced Defects

The influence of Cu contamination on radiation-induced defect reactions in n-type Czochralski-grown silicon (Cz-Si) crystals has been studied by means of the Hall effect technique, deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS with supporting theoretical modeling of defects. It is found that the contamination of Cz-Si samples with Cu does not influence significantly the energy spectrum and introduction rates of the principal electrically active defects induced by electron irradiation. The vacancy-oxygen (VO) centre, divacancy (V2) and a complex consisting of a silicon self-interstitial with the oxygen dimer (IO2) are found to be the dominant radiation-induced defects in Cu-contaminated samples as well as in uncontaminated ones. An isochronal annealing study has shown that the presence of Cu affects the annealing behaviour of the vacancy-related defects. In Cu-doped samples the VO centre disappears upon annealing at significantly lower temperatures (175-250°C) compared to those of the VO disappearance in the uncontaminated samples (300-375°C). The disappearance of the VO centres in the Cu-doped samples occurs simultaneously with an anti-correlated introduction of a defect with an energy level at about Ec- 0.60 eV. It is suggested that this defect is formed by the interaction of a mobile Cu atom with the VO complex. According to results of quantum-chemical modelling, in the most stable configuration of the Cu-VO defect a Cu atom occupies a tetrahedral interstitial position nearest to the elongated Si-Si bond of the VO centre. The presence of the Cu atom is found to result in the further elongation of the Si-Si bond and a shift of the VO acceptor level to the middle of the gap. The annealing behaviour of V2 has also been found to be different in the irradiated Cu-doped samples compared to that in the uncontaminated ones. The most probable reason for this difference is an interaction of mobile Cu atoms with di-vacancies. An energy level at about Ec-0.17 eV has been tentatively assigned to a complex consisting of a Cu atom and a di-vacancy.

Modeling of radiation induced defects in space solar cells

2011 ◽  
Author(s):  
Robert J. Walters ◽  
Scott Messenger ◽  
Jeffrey H. Warner ◽  
Cory D. Cress ◽  
Maria Gonzalez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Radiation Induced ◽  
Induced Defects

Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

2006 ◽  
Author(s):  
Hae-seok Lee ◽  
Masafumi Yamaguchi ◽  
Nicholas J. Ekins-daukes ◽  
Aurangzeb Khan ◽  
Tatsuya Takamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 365-368 ◽  
Author(s):  
Giovanni Alfieri ◽  
Edouard V. Monakhov ◽  
Margareta K. Linnarsson ◽  
Bengt Gunnar Svensson
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
High Energy ◽  
Conduction Band Edge ◽  
Energy Band Gap ◽  
Annealing Step ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Thermal Stability Of

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.

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