Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

2001 ◽  
Vol 90 (3) ◽  
pp. 1170-1178 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Y. Ohshita ◽  
N. Dharmarasu ◽  
K. Araki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Production Rates ◽  
Radiation Induced ◽  
Silicon Materials ◽  
Induced Defects

Defect analysis of crystalline Si solar cells by learning radiation-induced defects in Si

2021 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Takefumi Kamioka ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita
Keyword(s):  
Solar Cells ◽  
Defect Analysis ◽  
Si Solar Cells ◽  
Radiation Induced ◽  
Induced Defects

Mechanism of radiation-induced defects in SiO2: The role of hydrogen

2007 ◽  
Vol 4 (3) ◽  
pp. 901-904 ◽  
Author(s):  
Roushdey Salh ◽  
H.-J. Fitting
Keyword(s):  
Radiation Induced ◽  
Induced Defects

Modeling of radiation induced defects in space solar cells

2011 ◽  
Author(s):  
Robert J. Walters ◽  
Scott Messenger ◽  
Jeffrey H. Warner ◽  
Cory D. Cress ◽  
Maria Gonzalez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Radiation Induced ◽  
Induced Defects

Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

2006 ◽  
Author(s):  
Hae-seok Lee ◽  
Masafumi Yamaguchi ◽  
Nicholas J. Ekins-daukes ◽  
Aurangzeb Khan ◽  
Tatsuya Takamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Impact of Boron and Gallium on Defects Production in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Aurangzeb Khan ◽  
Nethaji Dharmarasu ◽  
Masafumi Yamaguchi ◽  
Kenji Araki ◽  
Tuong K. Vu ◽  
...  
Keyword(s):  
Recombination Center ◽  
Valuable Insight ◽  
Electron Level ◽  
Boron Doped ◽  
Hole Level ◽  
Radiation Induced ◽  
Induced Defects ◽  
The Impact ◽  
Insight Into

ABSTRACTWe report the results of comparison of radiation-induced defects (1 MeV electrons) in n+-p-p+ Si diodes doped with gallium or boron ranging in concentration from 8 × 1014 to 5 × 1016 cm-3, together with the impact of oxygen on radiation –induced defects. Present results provide evidence for new defects states in addition to those previously reported in gallium- and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation-induced defects in Si. The interesting new future of our results is that the gallium appears to strongly suppress the radiation induced defect, especially hole level EV+0.36 eV, which is thought to act as a recombination center. Similarly the dominant electron level at EC-0.18 eV in B-doped Si (which act as a donor) has not been observed in Ga-doped CZ-grown Si.

Deep level analysis of radiation-induced defects in Si crystals and solar cells

1999 ◽  
Vol 86 (1) ◽  
pp. 217-223 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Aurangzeb Khan ◽  
Stephen J. Taylor ◽  
Koshi Ando ◽  
Tsutomu Yamaguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level ◽  
Radiation Induced ◽  
Induced Defects ◽  
Level Analysis
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