Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

2006 ◽  
Author(s):  
Hae-seok Lee ◽  
Masafumi Yamaguchi ◽  
Nicholas J. Ekins-daukes ◽  
Aurangzeb Khan ◽  
Tatsuya Takamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells

2000 ◽  
Vol 76 (18) ◽  
pp. 2559-2561 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Jacques C. Bourgoin ◽  
N. de Angelis ◽  
Tatsuya Takamoto
Keyword(s):  
Solar Cells ◽  
Room Temperature ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Radiation-Resistant Properties of Inp-Related Materials

1994 ◽  
Vol 373 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Koshi Ando ◽  
Hidehiko Kamada
Keyword(s):  
Gamma Rays ◽  
Minority Carrier ◽  
Deep Level ◽  
High Energy ◽  
Carrier Injection ◽  
High Energy Electrons ◽  
Radiation Resistant ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractIrradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Defect analysis of crystalline Si solar cells by learning radiation-induced defects in Si

2021 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Takefumi Kamioka ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita
Keyword(s):  
Solar Cells ◽  
Defect Analysis ◽  
Si Solar Cells ◽  
Radiation Induced ◽  
Induced Defects

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

2001 ◽  
Vol 90 (3) ◽  
pp. 1170-1178 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Y. Ohshita ◽  
N. Dharmarasu ◽  
K. Araki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Production Rates ◽  
Radiation Induced ◽  
Silicon Materials ◽  
Induced Defects

Modeling of radiation induced defects in space solar cells

2011 ◽  
Author(s):  
Robert J. Walters ◽  
Scott Messenger ◽  
Jeffrey H. Warner ◽  
Cory D. Cress ◽  
Maria Gonzalez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Radiation Induced ◽  
Induced Defects
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