Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

Dong Ji; Bing Liu; Yanwu Lu; Guipeng Liu; Qinsheng Zhu; Zhanguo Wang

doi:10.1063/1.3698391

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3698391 ◽

2012 ◽

Vol 100 (13) ◽

pp. 132105 ◽

Cited By ~ 22

Author(s):

Dong Ji ◽

Bing Liu ◽

Yanwu Lu ◽

Guipeng Liu ◽

Qinsheng Zhu ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction ◽

Interfacial Charge

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Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors

Journal of Electronic Materials ◽

10.1007/s11664-012-2144-0 ◽

2012 ◽

Vol 41 (8) ◽

pp. 2130-2138 ◽

Cited By ~ 10

Author(s):

Lin Wang ◽

Weida Hu ◽

Xiaoshuang Chen ◽

Wei Lu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Interface Scattering ◽

Double Heterojunction

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Influence of Sinking-Gate on Al0.24Ga0.76As/InGaAs Double Heterojunction High Electron Mobility Transistors

ECS Meeting Abstracts ◽

10.1149/ma2007-01/16/796 ◽

2007 ◽

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.345244 ◽

1990 ◽

Vol 67 (1) ◽

pp. 550-552 ◽

Cited By ~ 3

Author(s):

Rong‐Ting Huang ◽

Yung‐Yi Tu ◽

Dumrong Kasemset ◽

N. Nouri ◽

C. Colvard ◽

...

Keyword(s):

Vapor Phase ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

High Electron ◽

Organometallic Vapor Phase Epitaxy ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Cited By ~ 3

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13126 ◽

2016 ◽

Vol 16 (10) ◽

pp. 10193-10198 ◽

Cited By ~ 1

Author(s):

Ra Hee Kwon ◽

Hye Rim Eun ◽

Jae Hwa Seo ◽

Young Jun Yoon ◽

Young In Jang ◽

...

Keyword(s):

Design Optimization ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3481349 ◽

2010 ◽

Vol 108 (5) ◽

pp. 054501 ◽

Cited By ~ 16

Author(s):

L. Wang ◽

W. D. Hu ◽

X. S. Chen ◽

W. Lu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Self Heating ◽

Electron Mobility Transistors ◽

Heating Effects ◽

Double Heterojunction

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Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/23/12/125014 ◽

2008 ◽

Vol 23 (12) ◽

pp. 125014 ◽

Cited By ~ 1

Author(s):

M K Hsu ◽

S Y Chiu ◽

C H Wu ◽

D F Guo ◽

W S Lour

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.641442 ◽

1997 ◽

Vol 18 (11) ◽

pp. 550-552 ◽

Cited By ~ 14

Author(s):

Y.C. Wang ◽

J.M. Kuo ◽

F. Ren ◽

J.R. Lothian ◽

J.S. Weiner ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gas Source ◽

Double Heterojunction

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Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ga0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy

Solid-State Electronics ◽

10.1016/s0038-1101(99)00192-6 ◽

1999 ◽

Vol 43 (11) ◽

pp. 2097-2101

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

Solid State Communications ◽

10.1016/j.ssc.2012.10.010 ◽

2013 ◽

Vol 153 (1) ◽

pp. 53-57 ◽

Cited By ~ 3

Author(s):

Dong Ji ◽

Yanwu Lu ◽

Bing Liu ◽

Guipeng Liu ◽

Qinsheng Zhu ◽

...

Keyword(s):

Electron Gas ◽

High Electron Mobility Transistors ◽

High Electron ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction ◽

Dimensional Electron Gas ◽

Interfacial Charge

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