scholarly journals Electron beam induced current and remote electron beam induced current assessment of chemical vapor deposited diamond films

1999 ◽  
Vol 85 (3) ◽  
pp. 1438-1443 ◽  
Author(s):  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Electron Beam ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Induced Current ◽  
Chemical Vapor Deposited ◽  
Current Assessment ◽  
Electron Beam Induced Current

Micropatterning of Chemical-Vapor-Deposited Diamond Films in Electron Beam Lithography

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4532-4535 ◽  
Author(s):  
Shuji Kiyohara ◽  
Kenjiro Ayano ◽  
Takahisa Abe ◽  
Katsumi Mori
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Electrical and Optical Properties of GaAs Heteroepitaxial Films on Si Substrates

1986 ◽  
Vol 77 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Masafumi Yamaguchi
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Film Thickness ◽  
Film Surface ◽  
Chemical Vapor ◽  
Induced Current ◽  
Electrical And Optical Properties ◽  
Si Substrates ◽  
Interface Charges ◽  
Electron Beam Induced Current

ABSTRACTElectrical and optical properties of single-domain GaAs heteroepitaxial films grown on Si(100) by using metalorganic chemical vapor deposition have been investigated. Cathodolumi-nescence and electron-beam induced current experiments have revealed that signal nonuniformities on the film surface agree in number with GaAs microdefect densities observed through chemical etching, rather than conventional aligned etch-pit densities. The cathodoluminescence experiments also indicate that GaAs properties are improved with increases in film thickness. This nonuniformity and the film-thickness dependence are related to GaAs solar cell characteristics fabricated on the Si substrate. A GaAs/Si interface study proves that p-type Si substrates cause type conversions near the interface due to GaAs growth. Evidence of positive interface charges in the GaAs/Si system is determined by using Hall effect measurements, secondary-ion mass spectroscopy and electron-beam induced current experiments.

Hydrogen-Induced Luminescent States In The Subsurface Region Of Homoepitaxial Diamond Films

1996 ◽  
Vol 442 ◽  
Author(s):  
Kazushi Hayashi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Takashi Sekiguchi ◽  
Hideyo Okushi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Surface Region ◽  
Subsurface Region ◽  
Incident Electron Beam ◽  
Chemical Vapor Deposited ◽  
Complex Forms

AbstractWe found the existence of hydrogen-induced luminescent states in the subsurface region of chemical-vapor-deposited homoepitaxial diamond films by means of cathodoluminescence (CL). A specific broad peak at around 540 nm is observed in both as-deposited diamond films and those treated by hydrogen plasma at 800 °C, but not in conventional oxidized films. The accelerating voltage dependence of the CL spectra indicates that the luminescent states related to the 540 nm peak exist in the surface region and decrease abruptly with increasing the depth from the surface, showing that the depth distribution of the states slightly depends on the hydrogenation duration. Although the 540 nm peak is not observed in the films hydrogenated at 500 °C, it appears once the films are irradiated by an incident electron beam. It indicates the existence of a metastable configuration of hydrogen or its complex forms in the diamond films hydrogenated at low temperatures and a relaxation occurs into a stable one which produces luminescent states by the electron-beam irradiation.

Electron beam induced current assessment of doped and diffused junctions in epitaxial CdxHg1−xTe

1994 ◽  
Vol 138 (1-4) ◽  
pp. 917-923 ◽  
Author(s):  
M.P. Hastings ◽  
C.D. Maxey ◽  
B.E. Matthews ◽  
N.E. Metcalfe ◽  
P. Capper ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Assessment ◽  
Electron Beam Induced Current

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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