Hydrogen-Induced Luminescent States In The Subsurface Region Of Homoepitaxial Diamond Films

1996 ◽  
Vol 442 ◽  
Author(s):  
Kazushi Hayashi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Takashi Sekiguchi ◽  
Hideyo Okushi ◽  
...  

AbstractWe found the existence of hydrogen-induced luminescent states in the subsurface region of chemical-vapor-deposited homoepitaxial diamond films by means of cathodoluminescence (CL). A specific broad peak at around 540 nm is observed in both as-deposited diamond films and those treated by hydrogen plasma at 800 °C, but not in conventional oxidized films. The accelerating voltage dependence of the CL spectra indicates that the luminescent states related to the 540 nm peak exist in the surface region and decrease abruptly with increasing the depth from the surface, showing that the depth distribution of the states slightly depends on the hydrogenation duration. Although the 540 nm peak is not observed in the films hydrogenated at 500 °C, it appears once the films are irradiated by an incident electron beam. It indicates the existence of a metastable configuration of hydrogen or its complex forms in the diamond films hydrogenated at low temperatures and a relaxation occurs into a stable one which produces luminescent states by the electron-beam irradiation.

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4532-4535 ◽  
Author(s):  
Shuji Kiyohara ◽  
Kenjiro Ayano ◽  
Takahisa Abe ◽  
Katsumi Mori

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.


1989 ◽  
Vol 162 ◽  
Author(s):  
Sacharia Albin ◽  
Linwood Watkins

ABSTRACTCurrent-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.


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