scholarly journals Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

2012 ◽  
Vol 100 (4) ◽  
pp. 042110 ◽  
Author(s):  
M. Forster ◽  
E. Fourmond ◽  
F. E. Rougieux ◽  
A. Cuevas ◽  
R. Gotoh ◽  
...  
Keyword(s):  
Oxygen Defect ◽  
Czochralski Silicon ◽  
Co Doped

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

2012 ◽  
Vol 725 ◽  
pp. 221-226
Author(s):  
Gudrun Kissinger ◽  
Georg Raming ◽  
Reinhold Wahlich ◽  
Timo Müller
Keyword(s):  
Wafer Surface ◽  
Diffusion Annealing ◽  
Interstitial Oxygen ◽  
Diffusion Anneal ◽  
Gate Oxides ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Co Doping ◽  
Defect Zone ◽  
Co Doped

An internally gettering bulk defect zone and a defect denuded zone of at least 5 µm below the wafer surface were generated by out-diffusion of interstitial oxygen during annealing at temperatures in the range 1075-1100 °C in argon atmosphere. The CZ silicon material used was optimized with respect to voids and contained a central OSF region and an outer Pv region. Due to co-doping of at least 3×1013cm-3nitrogen, a laterally homogeneous bulk microdefect density was obtained which is independent of the temperature of the out-diffusion anneal. The internal getter created in this way efficiently getters nickel impurities as demonstrated in a getter test with 6.6×1011cm-3of intentional Ni contamination. In the central OSF region of the as-grown nitrogen co-doped wafers, the nuclei capable of generating OSFs also degrade the gate oxide integrity. Out-diffusion annealing at 1075-1100°C dissolves most of the defects capable of generating OSFs and it strongly improves the integrity of 5 nm gate oxides.

scholarly journals Zn and Sb interaction and oxygen defect chemistry in dense SnO2 ceramics co-doped with ZnO and Sb2O5

2014 ◽  
Vol 122 (1426) ◽  
pp. 421-425 ◽  
Author(s):  
Minako HASHIGUCHI ◽  
Isao SAKAGUCHI ◽  
Shunichi HISHITA ◽  
Naoki OHASHI
Keyword(s):  
Defect Chemistry ◽  
Oxygen Defect ◽  
Co Doped

scholarly journals Boron-oxygen defect imaging in p-type Czochralski silicon

2013 ◽  
Vol 103 (9) ◽  
pp. 092105 ◽  
Author(s):  
S. Y. Lim ◽  
F. E. Rougieux ◽  
D. Macdonald
Keyword(s):  
Oxygen Defect ◽  
Czochralski Silicon ◽  
P Type ◽  
Defect Imaging

Electrical characterization of the slow boron oxygen defect component in Czochralski silicon

2015 ◽  
Vol 9 (12) ◽  
pp. 692-696 ◽  
Author(s):  
Tim Niewelt ◽  
Jonas Schön ◽  
Juliane Broisch ◽  
Wilhelm Warta ◽  
Martin Schubert
Keyword(s):  
Electrical Characterization ◽  
Oxygen Defect ◽  
Czochralski Silicon

scholarly journals Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

2009 ◽  
Vol 105 (9) ◽  
pp. 093704 ◽  
Author(s):  
D. Macdonald ◽  
F. Rougieux ◽  
A. Cuevas ◽  
B. Lim ◽  
J. Schmidt ◽  
...  
Keyword(s):  
Oxygen Defect ◽  
Defect Generation ◽  
Czochralski Silicon ◽  
P Type

Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon

2016 ◽  
Vol 11 (1) ◽  
pp. 4-22 ◽  
Author(s):  
Nitin Nampalli ◽  
Tsun Hang Fung ◽  
Stuart Wenham ◽  
Brett Hallam ◽  
Malcolm Abbott
Keyword(s):  
Statistical Analysis ◽  
Oxygen Defect ◽  
Czochralski Silicon ◽  
P Type

Investigations on accelerated processes for the boron–oxygen defect in p-type Czochralski silicon

2016 ◽  
Vol 145 ◽  
pp. 440-446 ◽  
Author(s):  
Phillip Hamer ◽  
Brett Hallam ◽  
Malcolm Abbott ◽  
Catherine Chan ◽  
Nitin Nampalli ◽  
...  
Keyword(s):  
Oxygen Defect ◽  
Czochralski Silicon ◽  
P Type

The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 139-146 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster ◽  
Karsten Bothe ◽  
Bianca Lim ◽  
Jan Schmidt
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Hole Concentration ◽  
Energy Levels ◽  
Minority Carrier Lifetime ◽  
Injection Level ◽  
Czochralski Silicon ◽  
P Type ◽  
Co Doped ◽  
Fast Stage

Illumination-induced degradation of minority carrier lifetime was studied in n-type Czochralski silicon co-doped with phosphorus and boron. The recombination centre that emerges is found to be identical to the fast-stage centre (FRC) known for p-Si where it is produced at a rate proportional to the squared hole concentration, p2. Since holes in n-Si are excess carriers of a relatively low concentration, the time scale of FRC generation in n-Si is increased by several orders of magnitude. The generation kinetics is non-linear, due to the dependence of p on the concentration of FRC and this non-linearity is well reproduced by simulations. The injection level dependence of the lifetime shows that FRC exists in 3 charge states (-1, 0, +1) possessing 2 energy levels. The recombination is controlled by both levels. The proper identification of FRC is a BsO2 complex of a substitutional boron and an oxygen dimer. The nature of the major lifetime-degrading centre in n-Si is thus different from that in p-Si - where the dominant one (a slow-stage centre, SRC) was found to be BiO2 – a complex involving an interstitial boron.

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